Improved film morphology of (CH3NH3)3Bi2I9 via cation displacement approach for lead-free perovskite solar cells

Methylammonium bismuth iodide (MA 3 Bi 2 I 9 ) has been recently investigated as a light absorber in lead-free perovskite solar cells. However, the MA 3 Bi 2 I 9 film fabricated via conventional one-step spin coating methods usually has poor surface morphology, limiting the device performance. Herei...

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Bibliographic Details
Published in:Journal of materials science 2019-07, Vol.54 (14), p.10371-10378
Main Authors: Li, Fengzhu, Fan, Haochen, Wang, Pengcheng, Li, Xiangjun, Song, Yanlin, Jiang, Ke-Jian
Format: Article
Language:English
Subjects:
Absorbers
Bismuth
Cations
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Energy conversion efficiency
Energy Materials
Lead free
Materials Science
Morphology
Perovskites
Photovoltaic cells
Polymer Sciences
Solar cells
Solid Mechanics
Spin coating
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Summary:Methylammonium bismuth iodide (MA 3 Bi 2 I 9 ) has been recently investigated as a light absorber in lead-free perovskite solar cells. However, the MA 3 Bi 2 I 9 film fabricated via conventional one-step spin coating methods usually has poor surface morphology, limiting the device performance. Herein, a cation displacement approach was employed for the fabrication of MA 3 Bi 2 I 9 film, where (CH 3 CH 2 CH 2 NH 3 ) 3 Bi 2 I 9 (PA 3 Bi 2 I 9 ) film was first deposited from a solution containing CH 3 CH 2 CH 2 NH 3 I and BiI 3 and then transformed into MA 3 Bi 2 I 9 film in a methylamine atmosphere. With the technique, the MA 3 Bi 2 I 9 film was realized with smooth, uniform, and compact surface morphology. Using the MA 3 Bi 2 I 9 film as a light absorber, a mesoporous photovoltaic device was fabricated with a power conversion efficiency of 0.33%, which is about two times higher than the value (0.15%) obtained for the one-step spin coating MA 3 Bi 2 I 9 device. Moreover, the facile film fabrication strategy utilized in this work paves the way for high reproducibility of lead-free organic–inorganic halide films and devices.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-019-03582-w