Technology of Nanosized Metal Layers for Forming a Reliable Contact to the Drain Area of Silicon Transistors

The technology of mounting a crystal of a semiconductor device is described. The technology of soldering in mounting a crystal of a semiconductor device is presented. The question of using lead solders for soldering silicon crystals is considered. Methods for the formation of multilayer metallizatio...

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Published in:Russian microelectronics 2020-11, Vol.49 (6), p.385-388
Main Authors: Ismailov, T. A., Shakhmaeva, A. R., Shangereeva, B. A.
Format: Article
Language:English
Subjects:
Crystals
Electrical Engineering
Engineering
Metallizing
Multilayers
Semiconductor devices
Silicon transistors
Soldering
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container_title Russian microelectronics
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creator Ismailov, T. A.
Shakhmaeva, A. R.
Shangereeva, B. A.
description The technology of mounting a crystal of a semiconductor device is described. The technology of soldering in mounting a crystal of a semiconductor device is presented. The question of using lead solders for soldering silicon crystals is considered. Methods for the formation of multilayer metallization of the reverse side of the crystal are considered and the optimal technology is selected. The parameters of the reliability of the crystal’s connection to the transistor’s case are checked.
doi_str_mv 10.1134/S1063739720060062
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subjects Crystals
Electrical Engineering
Engineering
Metallizing
Multilayers
Semiconductor devices
Silicon transistors
Soldering
title Technology of Nanosized Metal Layers for Forming a Reliable Contact to the Drain Area of Silicon Transistors
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