Structural changes in thin amorphous silicon film during electron irradiation

It is shown by methods of Raman spectroscopy that irradiation of amorphous silicon film 50 nm thick by focused electrons with energies of 5–10 keV results in its crystallization at temperatures much less, than the temperatures of melting and annealing of silicon. Analyses have shown that crystalliza...

Full description

Saved in:
Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2020-12, Vol.598, p.412439, Article 412439
Main Authors: Sidorov, A.I., Zaitsev, N.S., Podsvirov, O.A.
Format: Article
Language:English
Subjects:
Amorphous silicon
Annealing
Chemical bonds
Crystallization
Electron beam
Electron energy
Electron irradiation
Field emission
Raman spectroscopy
Silicon
Silicon films
Structure
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:It is shown by methods of Raman spectroscopy that irradiation of amorphous silicon film 50 nm thick by focused electrons with energies of 5–10 keV results in its crystallization at temperatures much less, than the temperatures of melting and annealing of silicon. Analyses have shown that crystallization is caused by the formation of negative charge area on a film surface, by the action of secondary electrons on chemical bonds and mutual location of silicon atoms, and also by the ionic field emission of silicon ions and their field migration to the irradiated zone from surrounding regions. These processes result in the change of equilibrium location of silicon atoms, typical for amorphous phase. The increase of electron energy leads to the increase of crystallization process efficiency.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2020.412439