Highly-Rectifying Graphene/GaN Schottky Contact for Self-Powered UV Photodetector

In this study, we demonstrated self-powered fast-response ultraviolet (UV) detection based on a highly-rectifying graphene/GaN Schottky contact. The device was fabricated by mechanically transferring a monolayer graphene onto lightly-doped GaN and showed excellent Schottky behaviors, including a hig...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 2021-02, Vol.33 (4), p.213-216
Main Authors: Wang, Shanyong, Chen, Rongsheng, Ren, Yuan, Hu, Yawei, Yang, Ziqi, Zhou, Changjian, Lv, Yuanjie, Lu, Xing
Format: Article
Language:English
Subjects:
Bias
fast response
Gallium nitride
Graphene
Lighting
Photoconductivity
Photodiodes
Response time
Schottky barriers
Schottky photodiode
self-powered
Semiconductor device measurement
UV detection
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, we demonstrated self-powered fast-response ultraviolet (UV) detection based on a highly-rectifying graphene/GaN Schottky contact. The device was fabricated by mechanically transferring a monolayer graphene onto lightly-doped GaN and showed excellent Schottky behaviors, including a high rectification ratio ( > 10^{8} ), a close-to-unity ideality factor and a relatively high Schottky barrier height (1.01 eV). At zero bias, the graphene/GaN Schottky photodiodes exhibited a strong photovoltaic response to UV illumination with a competitively short rise/decay time of 221/ 546~\mu \text{s} . A trap-associated photoconductive mechanism started to dominate the device's response when its bias went beyond −1 V, which could be identified from the suddenly increased responsivity and response time.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2021.3052171