THz laser generation on a hybrid surface plasmon in a HgCdTe-based structure

The possibility of amplifying a THz hybrid surface plasmon in a structure with an Hg0.82Cd0.18Te epitaxial film grown on a GaAs substrate and covered with a metal layer is investigated. It is shown that for a film thickness of 100 nm and a temperature of 80 K, the hybrid surface plasmon mode gain ca...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2021-02, Vol.51 (2), p.158-163
Main Authors: Dubinov, A A, Aleshkin, V Ya, Gavrilenko, V I, Rumyantsev, V V, Mikhailov, N N, Dvoretskii, S A, Utochkin, V V, Morozov, S V
Format: Article
Language:English
Subjects:
Epitaxial growth
Film thickness
hybrid plasmon
laser
Radiant flux density
Substrates
terahertz radiation
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Summary:The possibility of amplifying a THz hybrid surface plasmon in a structure with an Hg0.82Cd0.18Te epitaxial film grown on a GaAs substrate and covered with a metal layer is investigated. It is shown that for a film thickness of 100 nm and a temperature of 80 K, the hybrid surface plasmon mode gain can be greater than external losses at a pump radiation intensity with a wavelength of 2.3 μm, exceeding 850 kW cm-2. Additional doping of the Hg0.82Cd0.18Te layer with a donor impurity having a concentration of 4 × 1017 cm-3 will lead to a 1.5-fold decrease in the threshold pump intensity.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL17461