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THz laser generation on a hybrid surface plasmon in a HgCdTe-based structure
The possibility of amplifying a THz hybrid surface plasmon in a structure with an Hg0.82Cd0.18Te epitaxial film grown on a GaAs substrate and covered with a metal layer is investigated. It is shown that for a film thickness of 100 nm and a temperature of 80 K, the hybrid surface plasmon mode gain ca...
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Published in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2021-02, Vol.51 (2), p.158-163 |
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container_title | Quantum electronics (Woodbury, N.Y.) |
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creator | Dubinov, A A Aleshkin, V Ya Gavrilenko, V I Rumyantsev, V V Mikhailov, N N Dvoretskii, S A Utochkin, V V Morozov, S V |
description | The possibility of amplifying a THz hybrid surface plasmon in a structure with an Hg0.82Cd0.18Te epitaxial film grown on a GaAs substrate and covered with a metal layer is investigated. It is shown that for a film thickness of 100 nm and a temperature of 80 K, the hybrid surface plasmon mode gain can be greater than external losses at a pump radiation intensity with a wavelength of 2.3 μm, exceeding 850 kW cm-2. Additional doping of the Hg0.82Cd0.18Te layer with a donor impurity having a concentration of 4 × 1017 cm-3 will lead to a 1.5-fold decrease in the threshold pump intensity. |
doi_str_mv | 10.1070/QEL17461 |
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source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
subjects | Epitaxial growth Film thickness hybrid plasmon laser Radiant flux density Substrates terahertz radiation |
title | THz laser generation on a hybrid surface plasmon in a HgCdTe-based structure |
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