Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

GaN/Al0.5Ga0.5N and InN/Al0.5Ga0.5N as a III‐nitride quantum dot semiconductor optical amplifiers (QD‐SOAs) are studied in detail in this paper. The optical gain, spontaneous emission rate, and lineshape function are calculated using non‐Markovian relaxation compared with Markovian one. Gain is then...

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Bibliographic Details
Published in:Microwave and optical technology letters 2021-03, Vol.63 (3), p.993-1001
Main Authors: Al‐Shatravi, Ali Gehad, Abdullah, Muaffak, Al‐Khursan, Amin Habbeb
Format: Article
Language:English
Subjects:
Emission analysis
Environmental monitoring
Gallium nitrides
High gain
Indium nitride
Light amplifiers
Low noise
noise figure
non‐Markovian gain
Pollution monitoring
quantum dot (QD)
Quantum dots
rate equations (REs)
semiconductor optical amplifier (SOA)
Semiconductor optical amplifiers
Shot noise
Spontaneous emission
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Summary:GaN/Al0.5Ga0.5N and InN/Al0.5Ga0.5N as a III‐nitride quantum dot semiconductor optical amplifiers (QD‐SOAs) are studied in detail in this paper. The optical gain, spontaneous emission rate, and lineshape function are calculated using non‐Markovian relaxation compared with Markovian one. Gain is then connected with the rate equations model to obtain a dB gain, output power, and shot noise in these SOAs. GaN peaked at 351 nm which is preferred in optical coherence tomography applications. InN is peaked at 1028 nm which can be used in gas detection and environmental pollution monitoring. Both structures studied have high gain and low noise and nearly equivalent TE and TM gain which makes them adequate for the use in both these two modes. These calculations show the importance of InN and GaN QD nanostructure in the applications.
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.32671