Surface Electron–Ion Mixed Conduction of BaTiO3−δ Thin Film with Oxygen Vacancies

A BaTiO3−δ thin film with oxygen vacancies was prepared on a Pt/Al2O3 (0001) substrate by RF magnetron sputtering. The prepared thin film was preferentially grown in the [111] direction. The BaTiO3−δ thin film with a reduced interplanar distance (d111) exhibited the Ti3+ valence state of 4.4%, which...

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Bibliographic Details
Published in:Journal of the Physical Society of Japan 2021-01, Vol.90 (1)
Main Authors: Takada, Tomoasa, Fujita, Takeshi, Imagawa, Takehiro, Yamamoto, Emi, Kano, Jun, Shiga, Daisuke, Horiba, Koji, Kumigashira, Hiroshi, Higuchi, Tohru
Format: Article
Language:English
Subjects:
Aluminum oxide
Barium titanates
Electrical resistivity
Hydrogen bonds
Magnetron sputtering
Oxygen
Partial pressure
Photoelectric emission
Room temperature
Substrates
Thin films
Vacancies
Valence
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Summary:A BaTiO3−δ thin film with oxygen vacancies was prepared on a Pt/Al2O3 (0001) substrate by RF magnetron sputtering. The prepared thin film was preferentially grown in the [111] direction. The BaTiO3−δ thin film with a reduced interplanar distance (d111) exhibited the Ti3+ valence state of 4.4%, which is closely related to concentration of oxygen vacancies. The activation energy estimated from the Arrhenius plot of the electrical conductivity was approximately 61 meV. The electrical conductivity of ∼10−5 S/cm at room temperature did not depend on the oxygen gas partial pressure. The photoemission spectra exhibited the O–H bond peak and donor state near the Fermi level. These results indicate that the BaTiO3−δ/Pt/Al2O3 (0001) thin film has surface electron–proton mixed conduction at room temperature.
ISSN:0031-9015
1347-4073
DOI:10.7566/JPSJ.90.014707