Slow Ion Channeling in Monocrystalline Silicon

The profiles of the distribution of Si + ions over the depth of single-crystal silicon were calculated by the molecular dynamics method. The inelastic energy losses during deceleration are determined within the electron density functional theory. The factors affecting the ion channeling process are...

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Bibliographic Details
Published in:Physics of the solid state 2020-12, Vol.62 (12), p.2293-2300
Main Author: Svechnikov, A. B.
Format: Article
Language:English
Subjects:
Analysis
Channeling
Deceleration
Density functional theory
Density functionals
Electron density
Force and energy
Molecular dynamics
Nuclear facilities
Physics
Physics and Astronomy
Semiconductors
Silicon
Single crystals
Solid State Physics
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Summary:The profiles of the distribution of Si + ions over the depth of single-crystal silicon were calculated by the molecular dynamics method. The inelastic energy losses during deceleration are determined within the electron density functional theory. The factors affecting the ion channeling process are analyzed. In particular, the existence of the mass effect for the critical channeling angle is confirmed.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783420120276