MoS2, rGO, and CuO Nanocomposite-Based High Performance UV-Visible Dual-Band Photodetectors

• Published in: IEEE photonics technology letters 2021-01, Vol.33 (2), p.93-96
• Main Authors: Singh, Richa, Jit, Satyabrata, Tripathi, Shweta
• Format: Article
• Language: English
• Subjects: Absorption; Copper oxides; Detectors; Glass; Graphene; Indium tin oxide; Interfacial layer; Luminous intensity; Molybdenum; Molybdenum disulfide; molybdenum disulfide (MoS₂); Nanocomposites; Palladium; photodetector; Photodetectors; Photometers; Quantum efficiency; responsivity; Tin oxides; Voltage measurement
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2020.3045065

This letter reports a Pd/MoS 2 /rGO/CuO/ITO structure based Metal-Semiconductor-Metal (MSM) photodetector. The proposed MSM device is obtained by vertical integration of a Pd/MoS 2 Schottky junction and a CuO /ITO (i.e., (Indium-doped Tin Oxide) Schottky junction separated by thin reduced graphene oxide (rGO) layer. The rGO layer is used to improve the quality of the MoS 2 layer by mitigating the effects of both the lattice mismatching and van der Waals gap between the MoS 2 (Molybdenum disulphide) and CuO (Copper Oxide) layer. The proposed photodetector shows a UV-Visible dual-band photoresponse when the device is illuminated by a monochromatic light intensity of 13.6~\mu W/cm 2 at different wavelengths over 300-800 nm. Excellent responsivities and detectivities of 646.8 A/W and 7.28\times 10 ^{14} Jones at ~300 nm (in the UV region) and; of 84.32 A/W and 9.6\times 10 ^{13} Jones at ~ 498 nm (in the visible region) are measured at 1 V bias voltage, respectively. Also, the device also shows exceptionally high external quantum efficiency (EQE) of 2.6\times 10 ^{5} % and 3.7\times 10 ^{4} % at 300 nm and 498 nm, respectively.