Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission

The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative feedback between the emission intensity and carri...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2021-02, Vol.55 (2), p.154-161
Main Authors: Ageeva, N. N., Bronevoi, I. L., Zabegaev, D. N., Krivonosov, A. N.
Format: Article
Language:English
Subjects:
Comparative analysis
Cooling effects
Emission
Gallium arsenide
Heating
Interaction with Radiation
Magnetic Materials
Magnetism
Negative feedback
Optical pumping
Physics
Physics and Astronomy
Spectroscopy
Stimulated emission
Time measurement
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c355t-360455be99eb50416d301f3cbce809d86680f7c11cdc2f96f5caf7fa6ee1ca623
cites cdi_FETCH-LOGICAL-c355t-360455be99eb50416d301f3cbce809d86680f7c11cdc2f96f5caf7fa6ee1ca623
container_end_page 161
container_issue 2
container_start_page 154
container_title Semiconductors (Woodbury, N.Y.)
container_volume 55
creator Ageeva, N. N.
Bronevoi, I. L.
Zabegaev, D. N.
Krivonosov, A. N.
description The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative feedback between the emission intensity and carrier heating by this emission. The main parameter of this duration excess is the characteristic carrier cooling time slowed down due to carrier heating by emission. The effect of this time on renormalization of the band gap due to the Coulomb interaction of carriers is also noted. The part of the concept of the picosecond dynamics of the intense stimulated emission of GaAs, which has been obtained to date in our works with co-authors, is given in Conclusions.
doi_str_mv 10.1134/S1063782621020056
format article
fullrecord <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2491608000</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A652436830</galeid><sourcerecordid>A652436830</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-360455be99eb50416d301f3cbce809d86680f7c11cdc2f96f5caf7fa6ee1ca623</originalsourceid><addsrcrecordid>eNp1kFFLwzAQx4soOKcfwLeAz52XpknbxzHnJgwUpm9CSdPLzFjbmaQP-_amVPRBJAf5c_n_7i4XRbcUZpSy9H5LQbAsT0RCIQHg4iyaUCggFmlWnA9asHh4v4yunNsDUJrzdBK9L7VG5UmnyUJaa9CSNUpv2h2pTsR_IFnJuSMvRnUOVdfWZOtN0x-kx5osG-Oc6VoS4qG3ARu0_slfRxdaHhzefN_T6O1x-bpYx5vn1dNivokV49zHTEDKeYVFgRWHlIqaAdVMVQpzKOpciBx0pihVtUp0ITRXUmdaCkSqpEjYNLob6x5t99mj8-W-620bWpZJWlABOQAE12x07eQBS9PqzlupwqmxCd9rUZuQnwuepEzkbADoCCjbOWdRl0drGmlPJYVy2Hr5Z-uBSUbGBW-7Q_s7yv_QF3gDgs4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2491608000</pqid></control><display><type>article</type><title>Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission</title><source>Springer Link</source><creator>Ageeva, N. N. ; Bronevoi, I. L. ; Zabegaev, D. N. ; Krivonosov, A. N.</creator><creatorcontrib>Ageeva, N. N. ; Bronevoi, I. L. ; Zabegaev, D. N. ; Krivonosov, A. N.</creatorcontrib><description>The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative feedback between the emission intensity and carrier heating by this emission. The main parameter of this duration excess is the characteristic carrier cooling time slowed down due to carrier heating by emission. The effect of this time on renormalization of the band gap due to the Coulomb interaction of carriers is also noted. The part of the concept of the picosecond dynamics of the intense stimulated emission of GaAs, which has been obtained to date in our works with co-authors, is given in Conclusions.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782621020056</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Comparative analysis ; Cooling effects ; Emission ; Gallium arsenide ; Heating ; Interaction with Radiation ; Magnetic Materials ; Magnetism ; Negative feedback ; Optical pumping ; Physics ; Physics and Astronomy ; Spectroscopy ; Stimulated emission ; Time measurement</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.154-161</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7826, Semiconductors, 2021, Vol. 55, No. 2, pp. 154–161. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Fizika i Tekhnika Poluprovodnikov, 2021, Vol. 55, No. 2, pp. 113–120.</rights><rights>COPYRIGHT 2021 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-360455be99eb50416d301f3cbce809d86680f7c11cdc2f96f5caf7fa6ee1ca623</citedby><cites>FETCH-LOGICAL-c355t-360455be99eb50416d301f3cbce809d86680f7c11cdc2f96f5caf7fa6ee1ca623</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ageeva, N. N.</creatorcontrib><creatorcontrib>Bronevoi, I. L.</creatorcontrib><creatorcontrib>Zabegaev, D. N.</creatorcontrib><creatorcontrib>Krivonosov, A. N.</creatorcontrib><title>Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative feedback between the emission intensity and carrier heating by this emission. The main parameter of this duration excess is the characteristic carrier cooling time slowed down due to carrier heating by emission. The effect of this time on renormalization of the band gap due to the Coulomb interaction of carriers is also noted. The part of the concept of the picosecond dynamics of the intense stimulated emission of GaAs, which has been obtained to date in our works with co-authors, is given in Conclusions.</description><subject>Comparative analysis</subject><subject>Cooling effects</subject><subject>Emission</subject><subject>Gallium arsenide</subject><subject>Heating</subject><subject>Interaction with Radiation</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Negative feedback</subject><subject>Optical pumping</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Spectroscopy</subject><subject>Stimulated emission</subject><subject>Time measurement</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kFFLwzAQx4soOKcfwLeAz52XpknbxzHnJgwUpm9CSdPLzFjbmaQP-_amVPRBJAf5c_n_7i4XRbcUZpSy9H5LQbAsT0RCIQHg4iyaUCggFmlWnA9asHh4v4yunNsDUJrzdBK9L7VG5UmnyUJaa9CSNUpv2h2pTsR_IFnJuSMvRnUOVdfWZOtN0x-kx5osG-Oc6VoS4qG3ARu0_slfRxdaHhzefN_T6O1x-bpYx5vn1dNivokV49zHTEDKeYVFgRWHlIqaAdVMVQpzKOpciBx0pihVtUp0ITRXUmdaCkSqpEjYNLob6x5t99mj8-W-620bWpZJWlABOQAE12x07eQBS9PqzlupwqmxCd9rUZuQnwuepEzkbADoCCjbOWdRl0drGmlPJYVy2Hr5Z-uBSUbGBW-7Q_s7yv_QF3gDgs4</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Ageeva, N. N.</creator><creator>Bronevoi, I. L.</creator><creator>Zabegaev, D. N.</creator><creator>Krivonosov, A. N.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20210201</creationdate><title>Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission</title><author>Ageeva, N. N. ; Bronevoi, I. L. ; Zabegaev, D. N. ; Krivonosov, A. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-360455be99eb50416d301f3cbce809d86680f7c11cdc2f96f5caf7fa6ee1ca623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Comparative analysis</topic><topic>Cooling effects</topic><topic>Emission</topic><topic>Gallium arsenide</topic><topic>Heating</topic><topic>Interaction with Radiation</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Negative feedback</topic><topic>Optical pumping</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Spectroscopy</topic><topic>Stimulated emission</topic><topic>Time measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ageeva, N. N.</creatorcontrib><creatorcontrib>Bronevoi, I. L.</creatorcontrib><creatorcontrib>Zabegaev, D. N.</creatorcontrib><creatorcontrib>Krivonosov, A. N.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ageeva, N. N.</au><au>Bronevoi, I. L.</au><au>Zabegaev, D. N.</au><au>Krivonosov, A. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2021-02-01</date><risdate>2021</risdate><volume>55</volume><issue>2</issue><spage>154</spage><epage>161</epage><pages>154-161</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative feedback between the emission intensity and carrier heating by this emission. The main parameter of this duration excess is the characteristic carrier cooling time slowed down due to carrier heating by emission. The effect of this time on renormalization of the band gap due to the Coulomb interaction of carriers is also noted. The part of the concept of the picosecond dynamics of the intense stimulated emission of GaAs, which has been obtained to date in our works with co-authors, is given in Conclusions.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782621020056</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1063-7826
ispartof Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.154-161
issn 1063-7826
1090-6479
language eng
recordid cdi_proquest_journals_2491608000
source Springer Link
subjects Comparative analysis
Cooling effects
Emission
Gallium arsenide
Heating
Interaction with Radiation
Magnetic Materials
Magnetism
Negative feedback
Optical pumping
Physics
Physics and Astronomy
Spectroscopy
Stimulated emission
Time measurement
title Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T09%3A52%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Carrier%20Heating%20by%20the%20GaAs%20Picosecond%20Stimulated%20Emission%20on%20Duration%20of%20Emission&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Ageeva,%20N.%20N.&rft.date=2021-02-01&rft.volume=55&rft.issue=2&rft.spage=154&rft.epage=161&rft.pages=154-161&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782621020056&rft_dat=%3Cgale_proqu%3EA652436830%3C/gale_proqu%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c355t-360455be99eb50416d301f3cbce809d86680f7c11cdc2f96f5caf7fa6ee1ca623%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2491608000&rft_id=info:pmid/&rft_galeid=A652436830&rfr_iscdi=true