Intermittent growth for InAs quantum dot on GaAs(001)

•We perform the intermittent growth of InAs quantum dots on GaAs(001) at 500 °C.•QDs nucleation was observed by STMBE where in situ STM equipped within MBE chamber.•The initial QDs formation occurred from 1.15 to 1.38ML with the intermittent method.•Detail RHEED observation indicates large (n×3) and...

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Bibliographic Details
Published in:Journal of crystal growth 2020-12, Vol.551, p.125891, Article 125891
Main Authors: Toujyou, Takashi, Konishi, Tomoya, Hirayama, Motoi, Yamaguchi, Koichi, Tsukamoto, Shiro
Format: Article
Language:English
Subjects:
A1. Quantum dot
A1. Reflection high energy electron diffraction
A1. Scanning tunneling microscopey
A1. Surface reconstruction
A3. Intermittent growth
B2. InAs
Electron diffraction
High energy electrons
Indium arsenides
Indium gallium arsenides
Molecular beam epitaxy
Morphology
Nucleation
Quantum dots
Wetting
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Summary:•We perform the intermittent growth of InAs quantum dots on GaAs(001) at 500 °C.•QDs nucleation was observed by STMBE where in situ STM equipped within MBE chamber.•The initial QDs formation occurred from 1.15 to 1.38ML with the intermittent method.•Detail RHEED observation indicates large (n×3) and (2×4) area formation before QDs. We performed an intermittent growth of InAs quantum dots (QD) on GaAs(001) at 500 °C. The transition of surface structures during the growth was investigated by using reflection high energy electron diffraction observation. We also performed in situ observation of QD nucleation by using STMBE system in which a scanning tunneling microscope equipped within a molecular beam epitaxy chamber. We have found that the initial QDs formation occurred from 1.15 to 1.38 ML with the intermittent InAs supply. This InAs supply amount was much smaller than that of ordinary continuous deposition (∼1.66 ML). Moreover, the QDs mainly appeared on the terrace while they mainly appear on step edges by continuous growth at 500 °C. This indicates that the annealing parts of the intermittent growth affected the surface atomic structures of InGaAs wetting layer, uniforming the In fluctuation and stabilized the surface morphology. By the preparation of large (n×3) and (2×4) area, the QD nucleation occurs with a smaller InAs supply on the surface.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2020.125891