Effect of crystallographic orientation on structural response of silicon to femtosecond laser irradiation

Femtosecond laser has been widely utilized for modification of crystal structure to achieve desired functions. So far, however, the effect of crystallographic orientation on the induced structure by femtosecond laser processing has yet been comprehensively studied. The present work is undertaken in...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2021-03, Vol.127 (3), Article 196
Main Authors: Zhang, Xin, Zhang, Liang, Mironov, Sergey, Xiao, Rongshi, Guo, Liang, Huang, Ting
Format: Article
Language:English
Subjects:
Amorphization
Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Crystal structure
Crystallization
Crystallography
Electron backscatter diffraction
Electrons
Femtosecond pulsed lasers
High resolution electron microscopy
Irradiation
Laser processing
Lasers
Machines
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Orientation effects
Physics
Physics and Astronomy
Processes
Recrystallization
Silicon
Structural response
Surface energy
Surfaces and Interfaces
Temperature gradients
Thin Films
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Summary:Femtosecond laser has been widely utilized for modification of crystal structure to achieve desired functions. So far, however, the effect of crystallographic orientation on the induced structure by femtosecond laser processing has yet been comprehensively studied. The present work is undertaken in an attempt to fill this gap in our knowledge. To this end, commercial-purity Si is used as a target material and high-resolution transmission electron microscopy as well as electron backscatter diffraction are applied to examine the irradiation-induced microstructural changes. The structural response of the pulsed material is found to be principally influenced by the crystallographic orientation of the target surface. Specifically, at the surface orientation close to {111}, a pronounced amorphization effect is observed whereas no disordered material is detected at the orientations close to {100}. This phenomenon could be explained by the lowest crystallization speed required by the (111) surface due to its smallest surface energy. Compared with nanosecond laser, non-thermal melting induced by femtosecond laser induces mild thermal gradient and favors recrystallization.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-021-04341-y