Unoccupied Atomic-Like States of GaAs

The excitation spectrum of GaAs has been studied by reflection electron energy loss spectroscopy. In addition to dominant collective excitations, a series of single-electron transitions of a core Ga 3d electron to previously unknown unoccupied states located above the Fermi level by 1.25, 3.7, and 6...

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Bibliographic Details
Published in:JETP letters 2020-12, Vol.112 (12), p.764-768
Main Author: Mikoushkin, V. M.
Format: Article
Language:English
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Condensed Matter
Electron energy loss spectroscopy
Electron transitions
Electrons
Energy dissipation
Excitation spectra
Molecular
Optical and Plasma Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum dots
Quantum Information Technology
Single-electron transitions
Solid State Physics
Spectrum analysis
Spintronics
Ultraviolet radiation
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Summary:The excitation spectrum of GaAs has been studied by reflection electron energy loss spectroscopy. In addition to dominant collective excitations, a series of single-electron transitions of a core Ga 3d electron to previously unknown unoccupied states located above the Fermi level by 1.25, 3.7, and 6.8 eV have been detected in the spectrum. It has been shown that the detected states appear near the ion core of Ga because of an increase in its effective charge at excitation. Since the detected electronic levels are equidistant, they can be described by a subnanometer spherical quantum dot model. It has been shown that one of the decay channels of the detected states involves the emission of ultraviolet radiation.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364020240078