Influence of crystallographic orientation on the void growth at the grain boundaries in bi-crystals

Void growth and morphology evolution in fcc bi-crystals are investigated using crystal plasticity finite element method. For that purpose, representative volume element of bi-crystals with a void at the grain boundary are considered in the analysis. Grain boundary is assumed initially perpendicular/...

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Bibliographic Details
Published in:International journal of solids and structures 2021-03, Vol.212, p.61-79
Main Authors: Dakshinamurthy, Manjunath, Kowalczyk-Gajewska, Katarzyna, Vadillo, Guadalupe
Format: Article
Language:English
Subjects:
Axial stress
Bi-crystals
Boundary conditions
Crystal growth
Crystal plasticity
Crystal structure
Crystallography
Evolution
Finite element method
Grain boundaries
Heterogeneity
Lode parameter
Mechanical analysis
Morphology
Parameters
Stress Triaxiality
Unit cell calculations
Void growth
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Summary:Void growth and morphology evolution in fcc bi-crystals are investigated using crystal plasticity finite element method. For that purpose, representative volume element of bi-crystals with a void at the grain boundary are considered in the analysis. Grain boundary is assumed initially perpendicular/coaxial with the straight sides of the cell. Fully periodic boundary conditions are prescribed in the representative volume element and macroscopic stress triaxiality and Lode parameter are kept constant during the whole deformation process. Three different pairs of crystal orientations characterized as hard-hard, soft-soft and soft-hard have been employed for modelling the mechanical response of the bi-crystal. Simulations are performed to study the implications of triaxiality, Lode parameter and crystallographic orientation on slip mechanism, hardening and hence void evolution. The impact of void presence and its growth on the heterogeneity of lattice rotation and resulting grain fragmentation in neighbouring areas is also analysed and discussed.
ISSN:0020-7683
1879-2146
DOI:10.1016/j.ijsolstr.2020.11.035