Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag and Ni for chalcogenides Bi-M-S

• Published in: Journal of alloys and compounds 2021-03, Vol.858, p.157709, Article 157709
• Main Authors: Takagaki, Y., Jenichen, B., Ramsteiner, M., Herfort, J.
• Format: Article
• Language: English
• Subjects: Barrier layers; Chalcogenide; Chalcogenides; Copper; Dependence; Electric contacts; Low temperature; Metallurgical constituents; Nickel; Resistance switching; Silver; Spontaneous redox reaction; Switching; Synthesis; Transition metal; Transition metal alloys; Transition metals
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2020.157709

Insulating compounds are produced spontaneously for the chalcogenides containing certain elements in a reaction with Al. The generation of the electrical barrier at the Al-chalcogenide interface and its electrochemical annihilation give rise to interfacial resistance switching. We demonstrate the dependence of the barrier creation on the transition metal constituent using alloys based on S and Bi. While the resistance switching takes place generally when Cu is incorporated, the switching is not observed for the inclusion of Ni, apart from exceptional situations. A marginal behavior is found for the case with Ag. The Bi–Ag–S alloys develop a barrier layer also by a reaction with Ag. This barrier is dissolved at the opposite bias polarity in comparison to the case with the Al contact. We additionally show that the properties of the alloy films change widely with synthesis temperature. The sheet resistivity of the Cu-containing films can be orders of magnitude smaller than that of the Ag- and Ni-containing films. Large switching ratios of the resistance can thus be achieved using the Bi–Cu–S alloys, especially for the technologically advantageous low temperature synthesis. •Resistance switching based on a spontaneous creation of a barrier layer is demonstrated using chalcogenide alloys.•The switching characteristics are shown to change depending on the transition metal incorporated in the alloys.•The bias polarity for the electrochemical annihilation of the barrier changes depending on the contact metal.•The properties of the films of the chalcogenide alloys depend strongly on the synthesis temperature.