Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures

• Published in: Sensors and actuators. A. Physical. 2021-01, Vol.317, p.112449, Article 112449
• Main Authors: Demirezen, S., Çetinkaya, H.G., Kara, M., Yakuphanoğlu, F., Altındal, Ş.
• Format: Article
• Language: English
• Subjects: Al/(PCBM/NiO:ZnO)/p-Si; Aluminum; Anomalous peak in the forward bias C-V plots; Chemical synthesis; Electric potential; Illumination; Impedance spectroscopy method; Metal oxides; Nanocomposites; Nickel oxides; Photo-response characteristics; Photoelectric effect; Photoelectric emission; Resistance; Room temperature; Sensors; Silicon; Spin coating; Structures/diodes; Studies; Voltage; Zinc oxide
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/j.sna.2020.112449

[Display omitted] •Synthesis of the (PCBM/NiO:ZnO) metal-oxide nanocomposites.•Admittance measurements were performed for wide frequency range at room temperature.•Electrical and photosensing characteristics were investigated. In this study, metal-oxide (NiO:ZnO) nanocomposites mixed with different weight-percentages (2, 10, 20 % NiO) content were coated on the p-Si wafer via spin-coating method. The optical and electrical features of the Al/(PCBM/NiO:ZnO)/p-Si structures/diodes were investigated and compared via current-voltage/time (I–V/t) and capacitance/conductance-voltage-frequency (C/G–V-f) characteristics in dark and various illumination intensities (20, 40, 60, 80, 100 mW/cm2) at room temperature. Main electrical parameters of them such as ideality factor (n), barrier height (Φb), rectification ratio (RR = IF/IR) and series resistance (Rs) were calculated for each percentage (2, 10, and 20 % NiO). Experimental results show that the best percentages of NiO is 20 % in respect of high value of RR and low Rs, but the value of n increases with increasing in percentages. The transient photocurrent increases with increasing illumination level. The slope (m) of the double-logarithmic Iph-P plots were found as 0.67, 0.87 and 0.82, respectively, and these slopes confirmed that these nanocomposites exhibit photoconduction behaviour and hence Al/(PCBM/NiO:ZnO)/p-Si structure can be used a photo device/sensor. The observed changes in the I with illumination, C and G with frequency are the results of interface states (Nss) located at (PCBM/NiO:ZnO)/p-Si interface and so reorder and restructure of them under illumination, bias voltage, and frequency.