The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition

Diversification of pulse cycle numbers proportional to the AlN films thickness using PALE technique on c -plane sapphire substrate were carried out via MOCVD. It was experiential that the structural features of as-deposited AlN films were significantly impinged on the film thickness where the highes...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2021-02, Vol.32 (3), p.3211-3221
Main Authors: Abd Rahman, Mohd Nazri, Shuhaimi, Ahmad, Seng, Ooi Chong, Tan, Gary, Anuar, Afiq, Talik, Noor Azrina, Abdul Khudus, Muhammad I. M., Chanlek, Narong, Abd Majid, Wan Haliza
Format: Article
Language:English
Subjects:
Asymmetry
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystallography
Dislocation density
Film thickness
Materials Science
Metalorganic chemical vapor deposition
Optical and Electronic Materials
Optical properties
Organic chemicals
Organic chemistry
Room temperature
Sapphire
Spectrum analysis
Substrates
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Summary:Diversification of pulse cycle numbers proportional to the AlN films thickness using PALE technique on c -plane sapphire substrate were carried out via MOCVD. It was experiential that the structural features of as-deposited AlN films were significantly impinged on the film thickness where the highest number of pulse cycles (1050 pairs) present the lowest (0 0 0 2)-symmetry and (1 0–1 2)-asymmetry XRC analysis, manifest a decrease of threaded dislocation density. The XPS spectra present a low foreign impurities inclusion on the AlN film surface was achieved even at highest cycle number by engaging the PALE growth technique. The spectroscopy of PL and UV–Vis NIR were employed to probe the optical characteristics involving the absorption and their band-edge transitions. In both optical spectroscopies, the room temperature of band-edge emission lines has expressed a significant interconnection between the structural and optical quality of as-deposited AlN films at different pulse cycle numbers.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-05070-3