Thermodynamic modeling of SiBCN film deposition from the gas phase in the Si—B—N—C—H system

Thermodynamic modeling of the chemical vapor deposition (CVD) of films of complex composition in the Si—B—N—C—H system under reduced pressure (0.01 or 10 Torr) in a wide temperature range of 500–1500 K using various organoelement compounds was carried out. An example with mixtures of tetramethylsila...

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Bibliographic Details
Published in:Russian chemical bulletin 2021-02, Vol.70 (2), p.283-288
Main Authors: Shestakov, V. A., Kosinova, M. L.
Format: Article
Language:English
Subjects:
Boranes
Chemical vapor deposition
Chemistry
Chemistry and Materials Science
Chemistry/Food Science
Composition
Full Articles
Inorganic Chemistry
Modelling
Organic Chemistry
Silicon nitride
Thermodynamic models
Triethylamine
Trimethylamine
Vapor phases
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Summary:Thermodynamic modeling of the chemical vapor deposition (CVD) of films of complex composition in the Si—B—N—C—H system under reduced pressure (0.01 or 10 Torr) in a wide temperature range of 500–1500 K using various organoelement compounds was carried out. An example with mixtures of tetramethylsilane SiMe 4 and hexamethyldisilane (SiMe 3 ) 2 with trimethylamine borane Me 3 N · BH 3 or triethylamine borane Et 3 N · BH 3 illustrates a possibility to produce films of various compositions: from boron and silicon nitrides to their mixtures with carbides and/or carbon. According to the CVD diagrams, the prevailing equilibrium condensed phases are various phase complexes containing SiC, Si 3 N 4 , BN, and C.
ISSN:1066-5285
1573-9171
DOI:10.1007/s11172-021-3083-9