Ferroelectric Undoped HfO x Capacitor With Symmetric Synaptic for Neural Network Accelerator

A plasma-based ferroelectric undoped HfO x capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffra...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-03, Vol.68 (3), p.1374-1377
Main Authors: Luo, Jun-Dao, Lai, Yu-Ying, Hsiang, Kuo-Yu, Wu, Chia-Feng, Yeh, Yun-Tien, Chung, Hao-Tung, Li, Yi-Shao, Chuang, Kai-Chi, Li, Wei-Shuo, Liao, Chun-Yu, Chen, Pin-Guang, Chen, Kuan-Neng, Lee, Min-Hung, Cheng, Huang-Chung
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Capacitors
Ferroelectric materials
Ferroelectricity
Neural networks
Phase transitions
Polarization
Symmetry
Training
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Summary:A plasma-based ferroelectric undoped HfO x capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal–ferroelectric–metal (MFM) capacitor presents excellent remnant polarization ([Formula Omitted]) up to [Formula Omitted]/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity ([Formula Omitted]/−1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve ([Formula Omitted]-[Formula Omitted]) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3052428