Simple theoretical analyses of the Burstein–Moss shift (BMS) revisited for n-GaAs semiconductor with and without band-tailing conditions

• Published in: Indian journal of physics 2021-03, Vol.95 (3), p.443-448
• Main Authors: Chakraborty, P. K., Mondal, B. N., Sardar, G.
• Format: Article
• Language: English
• Subjects: Astrophysics and Astroparticles; Doping; Inclusions; N-type semiconductors; Original Paper; Physics; Physics and Astronomy; Tailings
• ISSN: 0973-1458; 0974-9845
• DOI: 10.1007/s12648-020-01730-6

The Burstein–Moss shift (BMS) has been revisited for n-type GaAs semiconductor with and without band-tailing conditions. Unlike the earlier reported results, the present theoretical analyses of BMS depicted an oscillatory behavior due to the inclusions of the following relevant factors, viz. (a) k ¯ dependency of the optical matrix elements, (b) consideration of the Fermi integral (FI) methods for the calculation of Fermi energy in non-degenerately doped cases, to a higher-order terms, and (c) band-tailing effects due to heavy doping in degenerately doped condition. In the present communication, attempt has been made to recapitulate the FI of F 1/2 ( η ), for non-degenerately doped semiconductor that showed oscillations due to the presence of confluent hyper-geometric function, obtained by the exact integrations method involved with F 1/2 ( η ). However, for the heavy doping with band-tailing cases, the FI is found to be complex function of oscillatory amplitude and a phase angle ( α ). It must be noted that these oscillatory behaviors, demonstrated in the present paper, seemed to be depicted for the first time in both non-degenerately and degenerately doped semiconductors on the literature in the study of BMS.