A Chaotic Potential of Charged Dislocations in Group III-Nitride Heterojunctions

The structure of the chaotic potential caused by the electrostatic field of charged dislocations in group III-nitride heterojunctions is investigated. Taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas, the amplitude and scale of the chaotic poten...

Full description

Saved in:
Bibliographic Details
Published in:Technical physics letters 2021, Vol.47 (1), p.8-10
Main Authors: Bondarenko, V. B., Filimonov, A. V., Kumar, Ravi
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
Electric fields
Electron gas
Heterojunctions
Nitrides
Physics
Physics and Astronomy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The structure of the chaotic potential caused by the electrostatic field of charged dislocations in group III-nitride heterojunctions is investigated. Taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas, the amplitude and scale of the chaotic potential in the junction plane are determined. It is shown that the parameters of the chaotic potential depend on the density of surface states and the concentration of dislocations.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785021010053