A possible origin of the large leakage current in ferroelectric Al1−xScxN films

Leakage current analysis on 50 nm thick ferroelectric Al0.78Sc0.22N films with TiN electrodes has been performed. The electron conduction followed Schottky emission with an initial Schottky barrier height (ϕ B) of 0.46 eV. During the initial switching, a gradual shift in the leakage current was obse...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2021-03, Vol.60 (3)
Main Authors: Kataoka, Junji, Sung-Lin, Tsai, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Format: Article
Language:English
Subjects:
Ferroelectric materials
Ferroelectricity
Leakage current
Switching
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Summary:Leakage current analysis on 50 nm thick ferroelectric Al0.78Sc0.22N films with TiN electrodes has been performed. The electron conduction followed Schottky emission with an initial Schottky barrier height (ϕ B) of 0.46 eV. During the initial switching, a gradual shift in the leakage current was observed, changing the ϕ B to 0.36 eV, and stayed constant for further switching cycles. From the extracted Richardson constant, the change in the ϕ B can be interpreted as the formation of a tunneling barrier due to the formation of nitrogen vacancies at the metal interface.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/abe644