Characteristics of CdS and photo-transistor as photo sensor on the sensor unit (SU-6804) and OP amp unit (OU-6801)

• Main Authors: Nabilah, Fasya, Munir, Ryaas Mishbachul, Firdaus, Annila, Lestari, Vissella Zulia, Lesmana, Aldi Destia, Thalia, Ananda, Dahrul, Muhammad, Har, Nazopatul Patonah, Bintari, Putri Lailatul, Rahmawaty, Vania, Pahlefi, Muh Raka Adithya, Abdurrahman, Irfan, Sejahtera, Irmansyah, Irzaman
• Format: Conference Proceeding
• Language: English
• Subjects: Bias; Electric potential; Light amplifiers; Light sources; Semiconductor devices; Sensors; Specifications; Transistors; Voltage
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/5.0037498

Has succeeded in conducting a Routine practicum with the theme of the characteristics of Photo-transistor and CdS as Photo sensor on the Photo Sensor Unit (SU-6804) and OP Amp Unit (OU-6801) in the Sensor and Transducer Laboratory of the Department of Physics, FMIPA IPB University. The installed specifications of the Photo Sensor Unit (SU-6804) include: Photo Bias Level: DC 0∼30mA, AC Bias Frequency: 100Hz∼10kHz (with Digital Counter), photo Sensing Range: 0∼200mm variable distance, photo Coupling Speed: 0∼1000 pulse / sec, sensor devices: LED, Photo- transistor, CdS, and input Voltage: DC±15V, 1A. The OP Amp Unit aids the installed specifications of the photosensor unit (SU-6804) (OU-6801). Measurement of light using CdS and Photo-transistor as photosensor with measurement distance ranges from 5 mm to 55 mm with a stage of 5 mm and 6 replications. The measurement results show that the farther the measurement distance of the light from the light source, the lower the electrical voltage. Based on the analyzed graphs and table, Photo-transistor is the most accurate to be used as a photosensor.