Spatially Inhomogeneous Distribution of the Quantum Mechanical Current Density at the Sub-Barrier Reflection of the Electron Wave from the Potential Step in the 2D Nanostructure

In this paper, the influence of the interference of electron waves during their reflection from a rectangular semi-infinite potential barrier to the spatial distribution of quantum mechanical current density еj x ( x , z ) ( e is the electron charge and j x ( x , z ) is the flow of probability densi...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2021-02, Vol.66 (2), p.184-194
Main Authors: Petrov, V. A., Nikitin, A. V.
Format: Article
Language:English
Subjects:
Attenuation
Communications Engineering
Current density
Current distribution
Distribution (Probability theory)
Electrons
Engineering
Interference
Nanoelectronics
Nanostructure
Networks
Potential barriers
Quantum mechanics
Quantum wells
Spatial distribution
Wave propagation
Wave reflection
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Summary:In this paper, the influence of the interference of electron waves during their reflection from a rectangular semi-infinite potential barrier to the spatial distribution of quantum mechanical current density еj x ( x , z ) ( e is the electron charge and j x ( x , z ) is the flow of probability density) in a semiconductor 2D nanostructure is theoretically studied. The structure consists of narrow and wide rectangular quantum wells (QWs) arranged successively along the direction of electron wave propagation. It is assumed that the wave falls from narrow QW 1 on a potential barrier of height V 0 in wide QW 2 . It is shown that when a wave with energy less than V 0 falls on the barrier, then, in certain conditions, spatially inhomogeneous distribution oscillating in a complicated way exists in QW 1 . An exponential attenuation and coordinate dependent leakage under the barrier may occur in QW 2 . It is shown that this behavior of and is caused by the interference of electron waves propagating through different quantum-dimensional subbands in the considered nanostructure.
ISSN:1064-2269
1555-6557
DOI:10.1134/S106422692102011X