Level-crossing induced spin phenomena in SiC: A theoretical study

A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additio...

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Bibliographic Details
Published in:Physical review. B 2021-01, Vol.103 (1), p.014403, Article 014403
Main Authors: Sosnovsky, Denis V., Ivanov, Konstantin L.
Format: Article
Language:English
Subjects:
Color centers
Excitation
Ground state
Magnetic resonance
Photoluminescence
Silicon carbide
Spin dynamics
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Summary:A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin3/2 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)].
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.103.014403