Erratum: Method for Analyzing the Temperature and Pressure Dependence of the Growth of an Oxide Film in the Thermal Oxidation of Si and SiC [J. Phys. Soc. Jpn. 89, 104602 (2020)]

Saved in:
Bibliographic Details
Published in:Journal of the Physical Society of Japan 2021-03, Vol.90 (3), p.38001
Main Author: Itoh, Makoto
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0031-9015
1347-4073
DOI:10.7566/JPSJ.90.038001