New investigation of an E-mode metal-insulator-semiconductor AlInN/AlN/GaN HEMT with an Au-T-gate

In a high electron mobility transistor (HEMT), the density of the twodimensional electron gas (2DEG) channel is modulated by the application of a bias to a Schottky metal gate. These devices are depletion mode (D-mode), which means that a negative bias must be applied to the gate to deplete the elec...

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Bibliographic Details
Published in:Telkomnika 2021-04, Vol.19 (2), p.531-539
Main Authors: Babaya, Asmae, Saadi, Adil, Bri, Seddik
Format: Article
Language:English
Subjects:
Aluminum nitride
Bias
Circuits
Depletion
Electric fields
Electron gas
Electrons
Gallium nitrides
Gold
High electron mobility transistors
Insulators
Investigations
MIS (semiconductors)
Physical properties
Power supply
Threshold voltage
Transconductance
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Summary:In a high electron mobility transistor (HEMT), the density of the twodimensional electron gas (2DEG) channel is modulated by the application of a bias to a Schottky metal gate. These devices are depletion mode (D-mode), which means that a negative bias must be applied to the gate to deplete the electron channel and turn. The most challenging aspect in the present research activity on based-GaN devices is the development of a reliable way to achieve an enhancement-mode (E-mode) HEMT. Enhancement-mode GaN HEMTs would offer a simplified circuitry by eliminating the negative power supply. In this work, the aim is to investigate the different techniques which can influence the threshold voltage and shift it to a positive value. A novel E-mode metal-insulator-semiconductor (MIS) AlInN/GaN HEMT with an Au-T-gate has been investigated. The impacts of window-recess and deep-recess have been discussed, it was found that for dp=28 nm and wn=1.8 pm the threshold voltage achieves 0.7 V and the transconductance (Gm) peak value of 523 mS at Vgs=3.5 V. The drain current characteristic has been demonstrated.
ISSN:1693-6930
2302-9293
DOI:10.12928/telkomnika.v19i2.15914