Growth and characterization of ZnTe single crystal via a novel Te flux vertical Bridgman method

• Published in: Rare metals 2021-04, Vol.40 (4), p.858-864
• Main Authors: Jin, Min, Yang, Wen-Hui, Wang, Xiang-Hu, Li, Rong-Bin, Xu, Ya-Dong, Xu, Jia-Yue
• Format: Article
• Language: English
• Subjects: Biomaterials; Bridgman method; Chemistry and Materials Science; Communication; Crystal growth; Energy; Flux; Materials Engineering; Materials Science; Metallic Materials; Nanoscale Science and Technology; Physical Chemistry; Single crystals; Solid phases; Zinc telluride; Zinc tellurides
• ISSN: 1001-0521; 1867-7185
• DOI: 10.1007/s12598-020-01601-3

In this work, an II–VI group semiconductor zinc telluride (ZnTe) single crystal is prepared by a novel vertical Bridgman method using Te as flux. The initial mole ratio of Zn/Te = 3:7 is designed for raw material synthesis. ZnTe polycrystalline combined with rich Te is effectively fabricated through rocking technique at 1100 °C. A Φ 25 mm × 65 mm ZnTe boule is successfully grown under a ~ 40 °C·cm −1 temperature gradient with a growth speed of 5 mm·day −1 . The as-grown ZnTe crystal has a standard 1:1 stoichiometric ratio and pure F 43 m phase structure. The maximum transmittance perpendicular to (110) plane is about 64%, and the band gap ( E g ) is tested to be 2.225 eV. Terahertz (THz) examination results demonstrate that the time of the highest THz signal is around 17 ps and the frequency of the highest THz transmission is about 0.78 THz, implying that the ZnTe crystal grown by the present Te flux vertical Bridgman method has a good feasibility for THz application. Graphic abstract