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Effect of Major Factors on the Composition of Thin Bi2Se3 Films

The influence of the quantitative composition of the electrolyte and galvanostatic electrolysis conditions on the composition of thin Bi 2 Se 3 semiconductor films electrochemically deposited in the galvanostatic mode from a solution of Bi(NO 3 ) 3 ·5H 2 O and H 2 SeO 3 in ethylene glycol was studie...

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Bibliographic Details
Published in:Russian journal of applied chemistry 2021, Vol.94 (1), p.38-42
Main Authors: Majidzade, V. A., Javadova, S. P., Aliyev, A. Sh, Tagiyev, D. B.
Format: Article
Language:English
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Summary:The influence of the quantitative composition of the electrolyte and galvanostatic electrolysis conditions on the composition of thin Bi 2 Se 3 semiconductor films electrochemically deposited in the galvanostatic mode from a solution of Bi(NO 3 ) 3 ·5H 2 O and H 2 SeO 3 in ethylene glycol was studied. The results show that, with an increase in the current density and H 2 SeO 3 concentration, the bismuth content of the thin films decreases. As the electrolyte temperature, Bi(NO 3 ) 3 ·5H 2 O concentration, and electrolysis time are increased, the bismuth content of the thin films increases. The optimum electrolyte composition and electrochemical deposition conditions for obtaining thin Bi 2 Se 3 films of the composition close to stoichiometric were determined.
ISSN:1070-4272
1608-3296
DOI:10.1134/S1070427221010067