Rapid Research Letters

Among the many possible phase‐change materials that can be used in digital memories, Ge‐rich GeSbTe (GGST) alloys are of special interest due to their much higher thermal stability, i.e., the higher crystallization temperature, they offer. However, in contrast to congruent materials which may transi...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2021-03, Vol.15 (3)
Main Authors: Luong, Minh Anh, Agati, Marta, Ramond, Nicolas Ratel, Grisolia, Jérémie, Yannick Le Friec, Benoit, Daniel, Claverie, Alain
Format: Article
Language:English
Subjects:
Amorphous materials
Chemical composition
Crystallization
Electrical properties
Oxidation
Thermal stability
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Summary:Among the many possible phase‐change materials that can be used in digital memories, Ge‐rich GeSbTe (GGST) alloys are of special interest due to their much higher thermal stability, i.e., the higher crystallization temperature, they offer. However, in contrast to congruent materials which may transit from the amorphous to the crystalline state while keeping the same homogeneous chemical composition, GGST crystallization is obtained through the successive formation of the Ge and GST‐225 phases. For this reason, they show distinct properties and characteristics from those found in the canonical GST‐225 and GeTe alloys. Herein, some of these characteristics, their crystallization kinetics, the effect of N doping and oxidation, and their electrical properties are reviewed and highlighted.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.202000471