Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film

The effects of Mg 35 Sb 65 layer on the thermal stability and thickness change rate of Ge 2 Sb 2 Te 5 in superlattice films were studied. Compared with monolayer Ge 2 Sb 2 Te 5 films, Mg 35 Sb 65 /Ge 2 Sb 2 Te 5 films had higher resistance and crystallization temperature. The thermal stability and d...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2021-03, Vol.32 (5), p.6408-6413
Main Authors: Sun, Song, Hu, Yifeng, Lai, Tianshu, Zhu, Xiaoqin
Format: Article
Language:English
Subjects:
Annealing
Characterization and Evaluation of Materials
Chemistry and Materials Science
CMOS
Crystallization
Energy
Energy bands
Energy gap
Interlayers
Laboratories
Materials Science
Memory devices
Optical and Electronic Materials
Random access memory
Retention
Silicon wafers
Superlattices
Thermal stability
Thickness
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effects of Mg 35 Sb 65 layer on the thermal stability and thickness change rate of Ge 2 Sb 2 Te 5 in superlattice films were studied. Compared with monolayer Ge 2 Sb 2 Te 5 films, Mg 35 Sb 65 /Ge 2 Sb 2 Te 5 films had higher resistance and crystallization temperature. The thermal stability and data retention capability were improved significantly. The fundamental reason of the change of film resistance was explained from the change of energy band gap. According to the reliability of phase change memory devices, the thickness change rate of thin films was analyzed in detail.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-05358-y