Solution-Processable LaTiOx-PVP as Silicon-Free Gate Dielectric at Low Temperature for High-Performance Organic-Inorganic Field Effect Transistors

We report that the organic-inorganic composite of polyvinyl phenol (PVP) and lanthanum titanate can be used as a gate dielectric layer of a low-voltage thin film transistor (TFT). The high-k organic-inorganic composite is synthesized at low temperatures through a solution-processable method and depo...

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Bibliographic Details
Published in:Journal of electronic materials 2021-04, Vol.50 (4), p.2496-2503
Main Authors: Najafi-Ashtiani, Hamed, Tavousi, Alireza, Ramzannezhad, Ali, Rahdar, Abbas
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Dielectrics
Electron mobility
Electron transport
Electronics and Microelectronics
Field effect transistors
Indium tin oxides
Instrumentation
Lanthanum
Low temperature
Materials Science
Optical and Electronic Materials
Original Research Article
Phenols
Polyethylene terephthalate
Semiconductor devices
Solid State Physics
Spin coating
Substrates
Thin film transistors
Thin films
Threshold voltage
Transistors
Transport properties
Zinc oxide
Zinc oxides
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Summary:We report that the organic-inorganic composite of polyvinyl phenol (PVP) and lanthanum titanate can be used as a gate dielectric layer of a low-voltage thin film transistor (TFT). The high-k organic-inorganic composite is synthesized at low temperatures through a solution-processable method and deposited by a simple spin-coating technology on polyethylene terephthalate coated by indium tin oxide (PET-ITO) film substrate. The fabricated devices show small and positive threshold voltage, and thus are applicable for low-power and high-speed operation. Thin film organic-inorganic composite transistors show high current on/off on order of 10 4 , dependent on composition. Organic-inorganic thin film transistors (TFTs) fabricated using composite of polyvinyl phenol and lanthanum titanate layers as gate dielectric and zinc oxide (ZnO) films as channel layers exhibit superior electron transport characteristics with the electron mobility of 1.04 cm 2  V −1  s −1 , while the ratio of channel width ( W ) to channel length ( L ) for these devices is 20. Graphic Abstract
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-021-08766-2