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Solution-Processable LaTiOx-PVP as Silicon-Free Gate Dielectric at Low Temperature for High-Performance Organic-Inorganic Field Effect Transistors
We report that the organic-inorganic composite of polyvinyl phenol (PVP) and lanthanum titanate can be used as a gate dielectric layer of a low-voltage thin film transistor (TFT). The high-k organic-inorganic composite is synthesized at low temperatures through a solution-processable method and depo...
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| Published in: | Journal of electronic materials 2021-04, Vol.50 (4), p.2496-2503 |
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| Main Authors: | , , , |
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| cites | cdi_FETCH-LOGICAL-c319t-72d9a9d791496b85efd41488783e6631ff7a7f85d3ac7e9b406de56f802f015c3 |
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| container_issue | 4 |
| container_start_page | 2496 |
| container_title | Journal of electronic materials |
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| creator | Najafi-Ashtiani, Hamed Tavousi, Alireza Ramzannezhad, Ali Rahdar, Abbas |
| description | We report that the organic-inorganic composite of polyvinyl phenol (PVP) and lanthanum titanate can be used as a gate dielectric layer of a low-voltage thin film transistor (TFT). The high-k organic-inorganic composite is synthesized at low temperatures through a solution-processable method and deposited by a simple spin-coating technology on polyethylene terephthalate coated by indium tin oxide (PET-ITO) film substrate. The fabricated devices show small and positive threshold voltage, and thus are applicable for low-power and high-speed operation. Thin film organic-inorganic composite transistors show high current on/off on order of 10
4
, dependent on composition. Organic-inorganic thin film transistors (TFTs) fabricated using composite of polyvinyl phenol and lanthanum titanate layers as gate dielectric and zinc oxide (ZnO) films as channel layers exhibit superior electron transport characteristics with the electron mobility of 1.04 cm
2
V
−1
s
−1
, while the ratio of channel width (
W
) to channel length (
L
) for these devices is 20.
Graphic Abstract |
| doi_str_mv | 10.1007/s11664-021-08766-2 |
| format | article |
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4
, dependent on composition. Organic-inorganic thin film transistors (TFTs) fabricated using composite of polyvinyl phenol and lanthanum titanate layers as gate dielectric and zinc oxide (ZnO) films as channel layers exhibit superior electron transport characteristics with the electron mobility of 1.04 cm
2
V
−1
s
−1
, while the ratio of channel width (
W
) to channel length (
L
) for these devices is 20.
Graphic Abstract</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-021-08766-2</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Dielectrics ; Electron mobility ; Electron transport ; Electronics and Microelectronics ; Field effect transistors ; Indium tin oxides ; Instrumentation ; Lanthanum ; Low temperature ; Materials Science ; Optical and Electronic Materials ; Original Research Article ; Phenols ; Polyethylene terephthalate ; Semiconductor devices ; Solid State Physics ; Spin coating ; Substrates ; Thin film transistors ; Thin films ; Threshold voltage ; Transistors ; Transport properties ; Zinc oxide ; Zinc oxides</subject><ispartof>Journal of electronic materials, 2021-04, Vol.50 (4), p.2496-2503</ispartof><rights>The Minerals, Metals & Materials Society 2021</rights><rights>The Minerals, Metals & Materials Society 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-72d9a9d791496b85efd41488783e6631ff7a7f85d3ac7e9b406de56f802f015c3</citedby><cites>FETCH-LOGICAL-c319t-72d9a9d791496b85efd41488783e6631ff7a7f85d3ac7e9b406de56f802f015c3</cites><orcidid>0000-0002-9977-8474</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Najafi-Ashtiani, Hamed</creatorcontrib><creatorcontrib>Tavousi, Alireza</creatorcontrib><creatorcontrib>Ramzannezhad, Ali</creatorcontrib><creatorcontrib>Rahdar, Abbas</creatorcontrib><title>Solution-Processable LaTiOx-PVP as Silicon-Free Gate Dielectric at Low Temperature for High-Performance Organic-Inorganic Field Effect Transistors</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>We report that the organic-inorganic composite of polyvinyl phenol (PVP) and lanthanum titanate can be used as a gate dielectric layer of a low-voltage thin film transistor (TFT). The high-k organic-inorganic composite is synthesized at low temperatures through a solution-processable method and deposited by a simple spin-coating technology on polyethylene terephthalate coated by indium tin oxide (PET-ITO) film substrate. The fabricated devices show small and positive threshold voltage, and thus are applicable for low-power and high-speed operation. Thin film organic-inorganic composite transistors show high current on/off on order of 10
4
, dependent on composition. Organic-inorganic thin film transistors (TFTs) fabricated using composite of polyvinyl phenol and lanthanum titanate layers as gate dielectric and zinc oxide (ZnO) films as channel layers exhibit superior electron transport characteristics with the electron mobility of 1.04 cm
2
V
−1
s
−1
, while the ratio of channel width (
W
) to channel length (
L
) for these devices is 20.
Graphic Abstract</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Dielectrics</subject><subject>Electron mobility</subject><subject>Electron transport</subject><subject>Electronics and Microelectronics</subject><subject>Field effect transistors</subject><subject>Indium tin oxides</subject><subject>Instrumentation</subject><subject>Lanthanum</subject><subject>Low temperature</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Phenols</subject><subject>Polyethylene terephthalate</subject><subject>Semiconductor devices</subject><subject>Solid State Physics</subject><subject>Spin coating</subject><subject>Substrates</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Transport properties</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kMuOEzEQRS0EEmHgB1hZYm3wo_3oJRomMyNFSqQJiJ3luMvBo047lDsCfoMvxtBI7FhVLc69pTqEvBb8reDcvqtCGNMxLgXjzhrD5BOyErpTTDjz-SlZcWUE01Lp5-RFrY-cCy2cWJGfD2W8zLlMbIclQq3hMALdhH3efme7TzsaKn3IY46NWCMAvQ0z0A8ZRogz5kjDTDflG93D6QwY5gsCTQXpXT5-YTvAtp_CFIFu8RimHNn9VJaNrlvJQG9Sak10j2Gquc4F60vyLIWxwqu_84p8XN_sr-_YZnt7f_1-w6IS_cysHPrQD7YXXW8OTkMaOtE5Z50CY5RIyQabnB5UiBb6Q8fNANokx2Vq30d1Rd4svWcsXy9QZ_9YLji1k15qLrXurVWNkgsVsdSKkPwZ8yngDy-4_-3eL-59c-__uPeyhdQSqg2ejoD_qv-T-gW4mIhs</recordid><startdate>20210401</startdate><enddate>20210401</enddate><creator>Najafi-Ashtiani, Hamed</creator><creator>Tavousi, Alireza</creator><creator>Ramzannezhad, Ali</creator><creator>Rahdar, Abbas</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0002-9977-8474</orcidid></search><sort><creationdate>20210401</creationdate><title>Solution-Processable LaTiOx-PVP as Silicon-Free Gate Dielectric at Low Temperature for High-Performance Organic-Inorganic Field Effect Transistors</title><author>Najafi-Ashtiani, Hamed ; Tavousi, Alireza ; Ramzannezhad, Ali ; Rahdar, Abbas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-72d9a9d791496b85efd41488783e6631ff7a7f85d3ac7e9b406de56f802f015c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Dielectrics</topic><topic>Electron mobility</topic><topic>Electron transport</topic><topic>Electronics and Microelectronics</topic><topic>Field effect transistors</topic><topic>Indium tin oxides</topic><topic>Instrumentation</topic><topic>Lanthanum</topic><topic>Low temperature</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Original Research Article</topic><topic>Phenols</topic><topic>Polyethylene terephthalate</topic><topic>Semiconductor devices</topic><topic>Solid State Physics</topic><topic>Spin coating</topic><topic>Substrates</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>Transport properties</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Najafi-Ashtiani, Hamed</creatorcontrib><creatorcontrib>Tavousi, Alireza</creatorcontrib><creatorcontrib>Ramzannezhad, Ali</creatorcontrib><creatorcontrib>Rahdar, Abbas</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Najafi-Ashtiani, Hamed</au><au>Tavousi, Alireza</au><au>Ramzannezhad, Ali</au><au>Rahdar, Abbas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Solution-Processable LaTiOx-PVP as Silicon-Free Gate Dielectric at Low Temperature for High-Performance Organic-Inorganic Field Effect Transistors</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2021-04-01</date><risdate>2021</risdate><volume>50</volume><issue>4</issue><spage>2496</spage><epage>2503</epage><pages>2496-2503</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>We report that the organic-inorganic composite of polyvinyl phenol (PVP) and lanthanum titanate can be used as a gate dielectric layer of a low-voltage thin film transistor (TFT). The high-k organic-inorganic composite is synthesized at low temperatures through a solution-processable method and deposited by a simple spin-coating technology on polyethylene terephthalate coated by indium tin oxide (PET-ITO) film substrate. The fabricated devices show small and positive threshold voltage, and thus are applicable for low-power and high-speed operation. Thin film organic-inorganic composite transistors show high current on/off on order of 10
4
, dependent on composition. Organic-inorganic thin film transistors (TFTs) fabricated using composite of polyvinyl phenol and lanthanum titanate layers as gate dielectric and zinc oxide (ZnO) films as channel layers exhibit superior electron transport characteristics with the electron mobility of 1.04 cm
2
V
−1
s
−1
, while the ratio of channel width (
W
) to channel length (
L
) for these devices is 20.
Graphic Abstract</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-021-08766-2</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-9977-8474</orcidid></addata></record> |
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| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2021-04, Vol.50 (4), p.2496-2503 |
| issn | 0361-5235 1543-186X |
| language | eng |
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| source | Springer Nature |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Dielectrics Electron mobility Electron transport Electronics and Microelectronics Field effect transistors Indium tin oxides Instrumentation Lanthanum Low temperature Materials Science Optical and Electronic Materials Original Research Article Phenols Polyethylene terephthalate Semiconductor devices Solid State Physics Spin coating Substrates Thin film transistors Thin films Threshold voltage Transistors Transport properties Zinc oxide Zinc oxides |
| title | Solution-Processable LaTiOx-PVP as Silicon-Free Gate Dielectric at Low Temperature for High-Performance Organic-Inorganic Field Effect Transistors |
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