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Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD
A pulsed atomic-layer epitaxy growth technique has been introduced to substantially diminish the induced strain and oxygen incorporation on aluminium nitride films grown at standard pressure by metal organic chemical vapour deposition. The qualities of the as-deposited aluminium nitride films were s...
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| Published in: | Journal of electronic materials 2021-04, Vol.50 (4), p.2313-2322 |
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| Main Authors: | , , , , , , , |
| Format: | Article |
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| cites | cdi_FETCH-LOGICAL-c319t-cfcdb6b48b1b9eb34a672445e1cf8dc8eef3044f61c20f1183d0d2f3382f21373 |
| container_end_page | 2322 |
| container_issue | 4 |
| container_start_page | 2313 |
| container_title | Journal of electronic materials |
| container_volume | 50 |
| creator | Abd Rahman, Mohd Nazri Shuhaimi, Ahmad Abdul Khudus, Muhammad I. M. Anuar, Afiq Zainorin, Mohamed Zulhakim Talik, Noor Azrina Chanlek, Narong Abd Majid, Wan Haliza |
| description | A pulsed atomic-layer epitaxy growth technique has been introduced to substantially diminish the induced strain and oxygen incorporation on aluminium nitride films grown at standard pressure by metal organic chemical vapour deposition. The qualities of the as-deposited aluminium nitride films were studied by varying the aluminium nitride nucleation layer growth temperature at 700°C, 800°C, 900°C, 1000°C and 1100°C, respectively. The compressive strain inside the as-deposited aluminium nitride films, induced by the hetero-epitaxial growth on sapphire, was investigated through Raman spectroscopy by focusing on the evolution of E
2
(high) peak frequency, where almost stress-free aluminium nitride films were attained at nucleation layer growth temperature of 1100°C. Then, the correlation between luminescence defect and level of foreign impurities respective to the varied nucleation layer growth temperatures were also systematically analysed through photoluminescence spectroscopy and x-ray photoelectron spectroscopy, respectively. |
| doi_str_mv | 10.1007/s11664-021-08768-0 |
| format | article |
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2
(high) peak frequency, where almost stress-free aluminium nitride films were attained at nucleation layer growth temperature of 1100°C. Then, the correlation between luminescence defect and level of foreign impurities respective to the varied nucleation layer growth temperatures were also systematically analysed through photoluminescence spectroscopy and x-ray photoelectron spectroscopy, respectively.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-021-08768-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum nitride ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Compressive properties ; Electronics and Microelectronics ; Epitaxial growth ; Instrumentation ; Materials Science ; Metalorganic chemical vapor deposition ; Nucleation ; Optical and Electronic Materials ; Organic chemicals ; Organic chemistry ; Original Research Article ; Peak frequency ; Photoelectrons ; Photoluminescence ; Raman spectroscopy ; Sapphire ; Solid State Physics ; Spectrum analysis</subject><ispartof>Journal of electronic materials, 2021-04, Vol.50 (4), p.2313-2322</ispartof><rights>The Minerals, Metals & Materials Society 2021</rights><rights>The Minerals, Metals & Materials Society 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-cfcdb6b48b1b9eb34a672445e1cf8dc8eef3044f61c20f1183d0d2f3382f21373</citedby><cites>FETCH-LOGICAL-c319t-cfcdb6b48b1b9eb34a672445e1cf8dc8eef3044f61c20f1183d0d2f3382f21373</cites><orcidid>0000-0002-6285-7662</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Abd Rahman, Mohd Nazri</creatorcontrib><creatorcontrib>Shuhaimi, Ahmad</creatorcontrib><creatorcontrib>Abdul Khudus, Muhammad I. M.</creatorcontrib><creatorcontrib>Anuar, Afiq</creatorcontrib><creatorcontrib>Zainorin, Mohamed Zulhakim</creatorcontrib><creatorcontrib>Talik, Noor Azrina</creatorcontrib><creatorcontrib>Chanlek, Narong</creatorcontrib><creatorcontrib>Abd Majid, Wan Haliza</creatorcontrib><title>Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>A pulsed atomic-layer epitaxy growth technique has been introduced to substantially diminish the induced strain and oxygen incorporation on aluminium nitride films grown at standard pressure by metal organic chemical vapour deposition. The qualities of the as-deposited aluminium nitride films were studied by varying the aluminium nitride nucleation layer growth temperature at 700°C, 800°C, 900°C, 1000°C and 1100°C, respectively. The compressive strain inside the as-deposited aluminium nitride films, induced by the hetero-epitaxial growth on sapphire, was investigated through Raman spectroscopy by focusing on the evolution of E
2
(high) peak frequency, where almost stress-free aluminium nitride films were attained at nucleation layer growth temperature of 1100°C. 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2
(high) peak frequency, where almost stress-free aluminium nitride films were attained at nucleation layer growth temperature of 1100°C. Then, the correlation between luminescence defect and level of foreign impurities respective to the varied nucleation layer growth temperatures were also systematically analysed through photoluminescence spectroscopy and x-ray photoelectron spectroscopy, respectively.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-021-08768-0</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-6285-7662</orcidid></addata></record> |
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| ispartof | Journal of electronic materials, 2021-04, Vol.50 (4), p.2313-2322 |
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| subjects | Aluminum nitride Characterization and Evaluation of Materials Chemistry and Materials Science Compressive properties Electronics and Microelectronics Epitaxial growth Instrumentation Materials Science Metalorganic chemical vapor deposition Nucleation Optical and Electronic Materials Organic chemicals Organic chemistry Original Research Article Peak frequency Photoelectrons Photoluminescence Raman spectroscopy Sapphire Solid State Physics Spectrum analysis |
| title | Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD |
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