In-Situ Pulsed Laser Interference Nanostructuring of Semiconductor Surfaces

We report the fabrication of periodic one- and two-dimensional nanostructures on semiconductor surfaces utilizing in-situ single-pulse direct laser interference patterning during molecular beam epitaxial growth. A Nd:YAG laser operating at 355 nm wavelength with a pulse duration of 7 ns is used to p...

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Bibliographic Details
Published in:Journal of laser micro nanoengineering 2020-09, Vol.15 (2), p.139-142
Main Author: Wang, Yun-RanHan, Im SikJin, Chao-YuanHopkinson, Mark
Format: Article
Language:English
Subjects:
Atoms
Data processing
Electric fields
Epitaxial growth
Epitaxy
Group III-V semiconductors
Innovations
Interference
Laser beams
Lasers
Molecular beam epitaxy
Molecular beams
Nanostructure
Neodymium lasers
Nucleation
Optoelectronics
Pulse duration
Pulsed lasers
Quantum dots
Quantum phenomena
Semiconductor lasers
Semiconductors
Semiconductors (Materials)
YAG lasers
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Summary:We report the fabrication of periodic one- and two-dimensional nanostructures on semiconductor surfaces utilizing in-situ single-pulse direct laser interference patterning during molecular beam epitaxial growth. A Nd:YAG laser operating at 355 nm wavelength with a pulse duration of 7 ns is used to produce periodic gratings or nanoislands with a submicron periodicity on the growing InAs/GaAs surfaces. By means of four-beam interference patterning, ordered square arrays of quantum dots with a lattice pitch of 200-300 nm are obtained. This in-situ technique offers a new way to control the quantum dot nucleation sites and it constitutes a technological advance to realize periodic III-V semiconductor nanostructures with impact in optoelectronics and quantum information processing. Keywords: direct laser interference patterning, multi-beam interference, nanostructures, III-V semiconductors, quantum dots, molecular beam epitaxy
ISSN:1880-0688
1880-0688
DOI:10.2961/jlmn.2020.02.2011