A 36.7 mW, 28 GHz receiver frontend using 40 nm RFCMOS technology with improved Figure of Merit

High carrier frequency requirement (Sub 6, 28 GHz) to accomplish the high bandwidth specification for millimeter wave band wireless communication, has reduced the ratio of operating carrier frequency (f c ) and unity current gain frequency (f t ) of MOSFETs in state of the art RFCMOS technology. Thi...

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Bibliographic Details
Published in:Analog integrated circuits and signal processing 2021-04, Vol.107 (1), p.135-144
Main Authors: Verma, Ankita, Yadav, Pritesh Kumar, Ambulker, Sunanda, Goswami, Manish, Misra, Prasanna Kumar
Format: Article
Language:English
Subjects:
Bandwidths
Bleeding
Carrier frequencies
Circuits and Systems
Electrical Engineering
Engineering
Figure of merit
High gain
Linearity
Low noise
Millimeter waves
MOSFETs
Noise
Noise levels
Noise reduction
Parameters
Power consumption
Signal,Image and Speech Processing
Technology
Topology
Transconductance
Wireless communications
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Summary:High carrier frequency requirement (Sub 6, 28 GHz) to accomplish the high bandwidth specification for millimeter wave band wireless communication, has reduced the ratio of operating carrier frequency (f c ) and unity current gain frequency (f t ) of MOSFETs in state of the art RFCMOS technology. This poses a challenge for designing a high gain and low noise receiver with better linearity. In an attempt to realize such receiver, this paper presents a 28 GHz receiver front-end in 40 nm RFCMOS technology. It includes 3-stage low noise amplifier incorporating push pull topology, current bleeding down converting gilbert cell based mixer with common gate transconductance stage followed by a standard Gm-C filter. By incorporating these techniques, the performance of the proposed receiver improved in terms of linearity as compared to the state of the art designs. For a comprehensive analysis, the combined effect of performance parameters has been compiled into a single metric i.e. Figure of Merit (FOM). The proposed receiver exhibits conversion gain of 30.5 dB and 2.15 dB noise figure with linearity parameter IIP3 being −21.7 dBm while consuming 36.7mW power resulting in FOM value of 0.27.
ISSN:0925-1030
1573-1979
DOI:10.1007/s10470-020-01792-w