All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion

Spin logic devices based on domain wall (DW) motion offer flexible architectures to store and carry logic information in a circuit. In this device concept, information is encoded in the magnetic state of a magnetic track shared by multiple magnetic tunnel junctions (MTJs) and is processed by DW moti...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2021-04, Vol.68 (4), p.2116-2122
Main Authors: Raymenants, Eline, Wan, Danny, Couet, Sebastien, Souriau, Laurent, Thiam, Arame, Tsvetanova, Diana, Canvel, Yann, Garello, Kevin, Kar, Gouri S., Heyns, Marc, Asselberghs, Inge, Nikonov, Dmitri E., Young, Ian A., Pizzini, Stefania, Radu, Iuliana, Dai Nguyen, Van
Format: Article
Language:English
Subjects:
CMOS
Condensed Matter
Devices
Domain walls
Electrical junctions
Engineering Sciences
Etching
Logic circuits
Magnetic devices
Magnetic domain walls
Magnetic domain walls (DWs)
Magnetic domains
magnetic logic devices
magnetic memory
Magnetic separation
Magnetic tunneling
Micro and nanotechnologies
Microelectronics
Physics
spintronics
Switches
Tunnel junctions
tunneling magnetoresistance (TMR)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Spin logic devices based on domain wall (DW) motion offer flexible architectures to store and carry logic information in a circuit. In this device concept, information is encoded in the magnetic state of a magnetic track shared by multiple magnetic tunnel junctions (MTJs) and is processed by DW motion. Here, we demonstrate that all-electrical control of such nanoscale DW-based logic devices can be realized using a novel MTJ stack. In addition to field-driven motion, which is isotropic, we show the directional motion of DWs driven by current, a key requirement for logic operation. Full electrical control of an AND logic gate using DW motion is demonstrated. Our devices are fabricated in imec's 300-mm CMOS fab on full wafers, which clears the path for large-scale integration. This proof of concept, thus, offers potential solutions for high-performance and low-power DW-based devices for logic and neuromorphic applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3061523