Design and Analysis of SRAM cell using Body Bias Controller for Low Power Applications

Low power consumption of electronic devices has become one of the most desirable factors in the present day’s technology. Static random access memory (SRAM) being an integral part of most of the electronic gadget suffers from leakage current which results in static power dissipation and subsequently...

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Bibliographic Details
Published in:Circuits, systems, and signal processing systems, and signal processing, 2021-05, Vol.40 (5), p.2135-2158
Main Authors: Mishra, Jitendra Kumar, Upadhyay, Bharat Bhushan, Misra, Prasanna Kumar, Goswami, Manish
Format: Article
Language:English
Subjects:
Bias
Circuits and Systems
CMOS
Controllers
Electrical Engineering
Electronic devices
Electronics and Microelectronics
Engineering
Instrumentation
Leakage current
Noise
Power consumption
Power management
Random access memory
Signal,Image and Speech Processing
Static random access memory
Threshold voltage
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Summary:Low power consumption of electronic devices has become one of the most desirable factors in the present day’s technology. Static random access memory (SRAM) being an integral part of most of the electronic gadget suffers from leakage current which results in static power dissipation and subsequently affects its performance particularly during standby or hold mode. This becomes crucial especially for those systems which are portable and have limited power supply. This work therefore proposes a body bias controller implemented with a 7T SRAM cell at 28 nm CMOS technology node which lowers the static power consumption and increases the hold static noise margin (HSNM) of SRAM during standby mode by changing the threshold voltage. Moreover, it also reduces write delay due to reduction in threshold voltage of proposed design without having a significant effect on write static noise margin and read static noise margin. It has been noticed that there is a reduction of 40%, 28%, 41.9% and 30% in static power dissipation whereas there is an enhancement of 19%, 14.2%, 6.6% and 5.2% in HSNM of the proposed design when compared to 6T SRAM cell, 7T SRAM cell, WRE8T SRAM cell and 9T SRAM cell, respectively. The proposed design can thus be a suitable alternative for low power SRAMs.
ISSN:0278-081X
1531-5878
DOI:10.1007/s00034-020-01578-5