A novel tunable bandgap voltage and current reference generation circuit

• Published in: Analog integrated circuits and signal processing 2021-05, Vol.107 (2), p.331-338
• Main Authors: Kumar, H. Prem Sai, Sharma, Vivek, Kumar, Y. B. Nithin, Vasantha, M. H.
• Format: Article
• Language: English
• Subjects: Bipolar transistors; Circuit design; Circuits; Circuits and Systems; CMOS; Electric potential; Electrical Engineering; Energy gap; Engineering; Fabrication; Junction transistors; Monte Carlo simulation; Power consumption; Semiconductor devices; Signal,Image and Speech Processing; Temperature range; Voltage
• ISSN: 0925-1030; 1573-1979
• DOI: 10.1007/s10470-020-01771-1

This paper presents a CMOS based tunable bandgap voltage and current reference generation circuit. The proposed circuit is designed without using Bipolar Junction Transistors (BJTs) for Proportional-To-Absolute-Temperature and Complementary-To-Absolute-Temperature generation, thus eliminating the problem of implementing BJT in CMOS fabrication process. The proposed circuit is simulated in standard 180 nm CMOS technology. A constant reference voltage ( V ref ) from 850 mV to 1.14 V and a constant reference current ( I ref ) from 170 to 227 nA is generated for corresponding supply voltage ( V dd ) tuned from 1.5 to 2 V for low power applications with an extended temperature range from − 55 to 175  ∘ C. The proposed circuit at V dd = 1.8 V has a Temperature Coefficient (TC) of 0.37 and 0.53 ppm/ ∘ C for V ref and I ref respectively, with a total power consumption of 594 nW (at V ref = 1.02 V and I ref = 204.5 nA). A monte-carlo simulation of the design is done for 1000 samples. The monte-carlo simulation for V ref , I ref and TC is done across the V dd (i.e. V dd = 2 V to 1.5 V).