Investigation of Structural, Elastic, Electronic, Magnetic and Thermoelectric Proprieties for Mn2RhZ (Z = Al, Si and Ge) Full-Heusler Alloys

In this study, we investigated the structural, elastic, electronic, magnetic and thermoelectric properties of Mn 2 RhZ (Z = Al, Si and Ge) full Heusler alloy via the full-potential linearized augmented plane wave (FP-LAPW) method. The calculated results reveal that the compound is more stable in the...

Full description

Saved in:
Bibliographic Details
Published in:International journal of thermophysics 2021, Vol.42 (6), Article 86
Main Authors: Guermit, Y., Caid, M., Rached, D., Drief, M., Rekab-Djabri, H., Lantri, T., Rached, H., Benkhettou, N.
Format: Article
Language:English
Subjects:
Aluminum
Classical Mechanics
Condensed Matter Physics
Elastic properties
Ferromagnetic phases
Ferromagnetism
Geophysics
Germanium
Heusler alloys
Industrial Chemistry/Chemical Engineering
Magnetic moments
Magnetic properties
Mathematical analysis
Physical Chemistry
Physics
Physics and Astronomy
Plane waves
Silicon
Stability criteria
Thermodynamics
Thermoelectricity
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, we investigated the structural, elastic, electronic, magnetic and thermoelectric properties of Mn 2 RhZ (Z = Al, Si and Ge) full Heusler alloy via the full-potential linearized augmented plane wave (FP-LAPW) method. The calculated results reveal that the compound is more stable in the Hg 2 MnAl prototype into the ferromagnetic phase. The calculated elastic constants show that the compounds satisfy the criteria stability. Due to the strong correlation, we used also GGA-PBE to see the improvement of the electronic properties, the integer magnetic moment confirm the half-metallic behaviour of these compounds. Finally, the thermoelectric parameters are computed for 100 K–800 K temperature range to explore the potential of these compounds for applications in technological devices.
ISSN:0195-928X
1572-9567
DOI:10.1007/s10765-021-02841-w