Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide

Understanding broadband photoconductive behaviour in two dimensional layered materials are important in order to utilize them for a variety of opto-electronic applications. Here we present our results of photocurrent spectroscopy measurements performed on few layer Indium Selenide (InSe) flakes. Tem...

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Bibliographic Details
Published in:arXiv.org 2021-04
Main Authors: Patil, Prasanna D, Wasala, Milinda, Ghosh, Sujoy, Sidong Lei, Talapatra, Saikat
Format: Article
Language:English
Subjects:
Broadband
Energy gap
Flakes
Indium selenides
Layered materials
Low temperature
Optoelectronics
Photoelectric effect
Photoelectric emission
Room temperature
Specific heat
Spectrum analysis
Temperature
Temperature dependence
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Summary:Understanding broadband photoconductive behaviour in two dimensional layered materials are important in order to utilize them for a variety of opto-electronic applications. Here we present our results of photocurrent spectroscopy measurements performed on few layer Indium Selenide (InSe) flakes. Temperature (T) dependent (40 K < T < 300 K) photocurrent spectroscopy was performed in order to estimate the band-gap energies E_g(T) of InSe at various temperatures. Our measurements indicate that room temperature E_g value for InSe flake was ~ 1.254 eV, which increased to a value of ~ 1.275 eV at low temperatures. The estimation of Debye temperatures by analysing the observed experimental variation of E_g as a function of T using several theoretical models is presented and discussed.
ISSN:2331-8422
DOI:10.48550/arxiv.2104.04877