Investigation of the Depth and Rate of Ion Etching of QWIP Structures

In this study we investigated the dependences of the rate of ion-beam etching of the upper contact layer (GaAs:Si), an active region consisting of a 50-fold alternation of barrier layers (Al x Ga 1– x As) and quantum wells (GaAs:Si) and the lower contact layer (GaAs:Si) along the depth of QWIP struc...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2021-03, Vol.66 (3), p.358-361
Main Authors: Trukhachev, A. V., Sednev, M. V., Trukhacheva, N. S., Boltar, K. O., Dirochka, A. I.
Format: Article
Language:English
Subjects:
Barrier layers
Communications Engineering
Composition effects
Engineering
Epitaxy
Etching
Gallium arsenide
Investigations
Ion beams
Ion etching
Molecular beam epitaxy
Networks
Quantum wells
Solid solutions
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Summary:In this study we investigated the dependences of the rate of ion-beam etching of the upper contact layer (GaAs:Si), an active region consisting of a 50-fold alternation of barrier layers (Al x Ga 1– x As) and quantum wells (GaAs:Si) and the lower contact layer (GaAs:Si) along the depth of QWIP structures based on GaAs–AlGaAs, fabricated by molecular beam epitaxy (MBE), in order to determine the effect of the composition of various layers on the etching rate and the ability to complete the etching process to the desired depth in time.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226921030190