Growth defects in heteroepitaxial diamond

In focus of this report are the mechanisms of formation, propagation, and interaction of growth defects in heteroepitaxial diamond films along with their impact on the optical emission properties of N- and Si-vacancy (NV and SiV) color centers. Here, we analyze and discuss the properties of incohere...

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Bibliographic Details
Published in:Journal of applied physics 2021-04, Vol.129 (16)
Main Authors: Lebedev, Vadim, Engels, Jan, Kustermann, Jan, Weippert, Jürgen, Cimalla, Volker, Kirste, Lutz, Giese, Christian, Quellmalz, Patricia, Graff, Andreas, Meyer, Frank, Höfer, Markus, Sittinger, Volker
Format: Article
Language:English
Subjects:
Applied physics
Chemical vapor deposition
Color centers
Crystal defects
Diamond films
Emission
Grain boundaries
Nitrogen
Nucleation
Optical properties
Threading dislocations
Vacancies
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Summary:In focus of this report are the mechanisms of formation, propagation, and interaction of growth defects in heteroepitaxial diamond films along with their impact on the optical emission properties of N- and Si-vacancy (NV and SiV) color centers. Here, we analyze and discuss the properties of incoherent grain boundaries (IGBs) and extended defects in a nitrogen- and boron-doped heterodiamond nucleated and grown on Ir(001) via bias-enhanced nucleation and chemical vapor deposition techniques. We show that the low-angle IGBs alter the structural and optical emission properties of NV and SiV complexes by subduing NV emission and supporting the formation of interstitial Si-vacancy complexes dominating in the faulted IGB regions. We also demonstrate that the IGB-confined threading dislocations are responsible for the vertical transport and incorporation of Si impurities in thick layers, leading to an enhanced SiV emission from the IGBs.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0045644