Investigation of an Opposed-Contact GaAs Photoconductive Semiconductor Switch at 1-kHz Excitation

The transient performance of gallium arsenide (GaAs) photoconductive semiconductor switches (PCSSs) triggered by laser diodes (LDs) at nano-joules (nJ) energy is of great significance for the potential high-power applications at high repetition rates. An opposed-contact GaAs PCSS with Ni/AuGe/WTi/Au...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-05, Vol.68 (5), p.2355-2359
Main Authors: Xu, Ming, Dong, Hangtian, Liu, Chun, Wang, Yi, Hu, Long, Lan, Chunpeng, Luo, Wei, Schneider, Harald
Format: Article
Language:English
Subjects:
Avalanche
Electric contacts
Electric fields
Electrodes
Excitation
Gallium arsenide
gallium arsenide (GaAs)
high gain (HG)
Monte Carlo simulation
Multiplication
Optical distortion
Optical pulses
Optical switches
photoconductive semiconductor switch (PCSS)
Photonics
repetition rate
Semiconductor lasers
Switches
Transient analysis
Transient performance
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Summary:The transient performance of gallium arsenide (GaAs) photoconductive semiconductor switches (PCSSs) triggered by laser diodes (LDs) at nano-joules (nJ) energy is of great significance for the potential high-power applications at high repetition rates. An opposed-contact GaAs PCSS with Ni/AuGe/WTi/Au electrodes is presented at single-shot and 1-kHz excitation. The influences of bias electric field up to 80 kV/cm on nonlinear characteristics are investigated quantitatively with a carriers' avalanche multiplication factor as high as 0.8\times 10^{{4}} . The effect of electric field on the carriers' dynamic process and thermal accumulation in repetitive operation is analyzed. The transient electric field distribution is demonstrated by an ensemble Monte Carlo simulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3066094