Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

In this study, metal–semiconductor–metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency...

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Bibliographic Details
Published in:Journal of nanomaterials 2021, Vol.2021, p.1-6
Main Authors: Lam, Kin-Tak, Young, Sheng-Joue, Chu, Yen-Lin, Tsai, Chi-Nan, Chu, Tung-Te, Lu, Ting-Sung, Ji, Liang-Wen
Format: Article
Language:English
Subjects:
Dark current
Electrodes
Gallium
Glass substrates
Grain boundaries
Indium gallium zinc oxide
Leakage current
Light
Magnetron sputtering
Metal oxides
Morphology
Nanomaterials
Photometers
Photovoltaic cells
Radio frequency
Rejection
Scanning electron microscopy
Semiconductors
Spectrum analysis
Thin films
Ultraviolet detectors
Zinc oxide
Zinc oxides
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Summary:In this study, metal–semiconductor–metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique. Results showed that under a 5 V applied bias; the dark currents of the pure ZnO and a-IGZO thin films were 0.112 pA and 2.85 nA, respectively. Meanwhile, the UV-to-visible rejection ratio of the pure ZnO and a-IGZO thin films were 14.33 and 256, respectively. Lastly, the PDs of thea-IGZO thin films had a lower leakage current and higher rejection ratio than that of the pure ZnO thin films from the UV to visible light region.
ISSN:1687-4110
1687-4129
DOI:10.1155/2021/6649200