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Carbon doping-induced defect centers in anodized alumina with enhanced optically stimulated luminescence
Anodized aluminum oxide (AAO) in amorphous form is shown to be a prospective phosphor for optically stimulated luminescence (OSL) by implanting 50 keV carbon ions at a fluence of 1 × 10 16 ions/cm 2 at room temperature. An almost 20-fold enhancement in continuous wave OSL (CW-OSL) sensitivity is ob...
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Published in: | Journal of materials science. Materials in electronics 2021-04, Vol.32 (8), p.10635-10643 |
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container_title | Journal of materials science. Materials in electronics |
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creator | Bhowmick, S. Pal, S. Singh, A. Khan, S. A. Mishra, D. R. Choudhary, R. J. Phase, D. M. Chini, T. K. Bakshi, A. K. Kanjilal, Aloke |
description | Anodized aluminum oxide (AAO) in amorphous form is shown to be a prospective phosphor for optically stimulated luminescence (OSL) by implanting 50 keV carbon ions at a fluence of 1 × 10
16
ions/cm
2
at room temperature. An almost 20-fold enhancement in continuous wave OSL (CW-OSL) sensitivity is obtained in carbon-doped AAO (C:AAO) by exposing to beta radiation, while an almost linear increase in CW-OSL intensity is recorded with increasing dose from 0.3 to 5 Gy. However, cathodoluminescence (CL) suggests an upsurge of oxygen vacancies, especially F
+
and F
2
2+
centers, at the cost of F center-related defects in C:AAO. Detailed X-ray photoelectron spectroscopy (XPS) analysis further reveals that the implanted carbon atoms can act as cationic impurities in AAO and stabilize the nearby F
+
centers via substitution of Al
3+
by C
2+
. The combined CL and XPS results are also shown to be capable of illustrating the CW-OSL response. This study would, therefore, be a benchmark for understanding the role of carbon in the substitutional sites of AAO for generating OSL active electron traps. |
doi_str_mv | 10.1007/s10854-021-05719-7 |
format | article |
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16
ions/cm
2
at room temperature. An almost 20-fold enhancement in continuous wave OSL (CW-OSL) sensitivity is obtained in carbon-doped AAO (C:AAO) by exposing to beta radiation, while an almost linear increase in CW-OSL intensity is recorded with increasing dose from 0.3 to 5 Gy. However, cathodoluminescence (CL) suggests an upsurge of oxygen vacancies, especially F
+
and F
2
2+
centers, at the cost of F center-related defects in C:AAO. Detailed X-ray photoelectron spectroscopy (XPS) analysis further reveals that the implanted carbon atoms can act as cationic impurities in AAO and stabilize the nearby F
+
centers via substitution of Al
3+
by C
2+
. The combined CL and XPS results are also shown to be capable of illustrating the CW-OSL response. This study would, therefore, be a benchmark for understanding the role of carbon in the substitutional sites of AAO for generating OSL active electron traps.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-021-05719-7</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum oxide ; Beta rays ; Carbon ; Cathodoluminescence ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Continuous radiation ; Electron traps ; Fluence ; Luminescence ; Materials Science ; Optical and Electronic Materials ; Phosphors ; Photoelectrons ; Room temperature ; X ray photoelectron spectroscopy</subject><ispartof>Journal of materials science. Materials in electronics, 2021-04, Vol.32 (8), p.10635-10643</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c270t-d902272dc45e158b1a22e960ceb878481ff0c9f2469b82ece9849df59d1137423</cites><orcidid>0000-0002-0805-4527</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Bhowmick, S.</creatorcontrib><creatorcontrib>Pal, S.</creatorcontrib><creatorcontrib>Singh, A.</creatorcontrib><creatorcontrib>Khan, S. A.</creatorcontrib><creatorcontrib>Mishra, D. R.</creatorcontrib><creatorcontrib>Choudhary, R. J.</creatorcontrib><creatorcontrib>Phase, D. M.</creatorcontrib><creatorcontrib>Chini, T. K.</creatorcontrib><creatorcontrib>Bakshi, A. K.</creatorcontrib><creatorcontrib>Kanjilal, Aloke</creatorcontrib><title>Carbon doping-induced defect centers in anodized alumina with enhanced optically stimulated luminescence</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Anodized aluminum oxide (AAO) in amorphous form is shown to be a prospective phosphor for optically stimulated luminescence (OSL) by implanting 50 keV carbon ions at a fluence of 1 × 10
16
ions/cm
2
at room temperature. An almost 20-fold enhancement in continuous wave OSL (CW-OSL) sensitivity is obtained in carbon-doped AAO (C:AAO) by exposing to beta radiation, while an almost linear increase in CW-OSL intensity is recorded with increasing dose from 0.3 to 5 Gy. However, cathodoluminescence (CL) suggests an upsurge of oxygen vacancies, especially F
+
and F
2
2+
centers, at the cost of F center-related defects in C:AAO. Detailed X-ray photoelectron spectroscopy (XPS) analysis further reveals that the implanted carbon atoms can act as cationic impurities in AAO and stabilize the nearby F
+
centers via substitution of Al
3+
by C
2+
. The combined CL and XPS results are also shown to be capable of illustrating the CW-OSL response. This study would, therefore, be a benchmark for understanding the role of carbon in the substitutional sites of AAO for generating OSL active electron traps.</description><subject>Aluminum oxide</subject><subject>Beta rays</subject><subject>Carbon</subject><subject>Cathodoluminescence</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Continuous radiation</subject><subject>Electron traps</subject><subject>Fluence</subject><subject>Luminescence</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Phosphors</subject><subject>Photoelectrons</subject><subject>Room temperature</subject><subject>X ray photoelectron spectroscopy</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKt_wNOC52iSTZrkKMUvKHhR8BayyWybss2uyS5Sf73bruDN08DM874DD0LXlNxSQuRdpkQJjgmjmAhJNZYnaEaFLDFX7OMUzYgWEnPB2Dm6yHlLCFnwUs3QZmlT1cbCt12IaxyiHxz4wkMNri8cxB5SLkIsbGx9-B5Pthl2IdriK_SbAuLGxkOg7frgbNPsi9yH3dDYflweSchji4NLdFbbJsPV75yj98eHt-UzXr0-vSzvV9gxSXrsNWFMMu-4ACpURS1joBfEQaWk4orWNXG6ZnyhK8XAgVZc-1poT2kpOSvn6Gbq7VL7OUDuzbYdUhxfGiaoEkIqwkeKTZRLbc4JatOlsLNpbygxB6NmMmpGo-Zo1MgxVE6hPMJxDemv-p_UD_ZFem4</recordid><startdate>20210401</startdate><enddate>20210401</enddate><creator>Bhowmick, S.</creator><creator>Pal, S.</creator><creator>Singh, A.</creator><creator>Khan, S. A.</creator><creator>Mishra, D. R.</creator><creator>Choudhary, R. J.</creator><creator>Phase, D. M.</creator><creator>Chini, T. K.</creator><creator>Bakshi, A. 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R. ; Choudhary, R. J. ; Phase, D. M. ; Chini, T. K. ; Bakshi, A. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bhowmick, S.</au><au>Pal, S.</au><au>Singh, A.</au><au>Khan, S. A.</au><au>Mishra, D. R.</au><au>Choudhary, R. J.</au><au>Phase, D. M.</au><au>Chini, T. K.</au><au>Bakshi, A. K.</au><au>Kanjilal, Aloke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carbon doping-induced defect centers in anodized alumina with enhanced optically stimulated luminescence</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2021-04-01</date><risdate>2021</risdate><volume>32</volume><issue>8</issue><spage>10635</spage><epage>10643</epage><pages>10635-10643</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Anodized aluminum oxide (AAO) in amorphous form is shown to be a prospective phosphor for optically stimulated luminescence (OSL) by implanting 50 keV carbon ions at a fluence of 1 × 10
16
ions/cm
2
at room temperature. An almost 20-fold enhancement in continuous wave OSL (CW-OSL) sensitivity is obtained in carbon-doped AAO (C:AAO) by exposing to beta radiation, while an almost linear increase in CW-OSL intensity is recorded with increasing dose from 0.3 to 5 Gy. However, cathodoluminescence (CL) suggests an upsurge of oxygen vacancies, especially F
+
and F
2
2+
centers, at the cost of F center-related defects in C:AAO. Detailed X-ray photoelectron spectroscopy (XPS) analysis further reveals that the implanted carbon atoms can act as cationic impurities in AAO and stabilize the nearby F
+
centers via substitution of Al
3+
by C
2+
. The combined CL and XPS results are also shown to be capable of illustrating the CW-OSL response. This study would, therefore, be a benchmark for understanding the role of carbon in the substitutional sites of AAO for generating OSL active electron traps.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-021-05719-7</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-0805-4527</orcidid></addata></record> |
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subjects | Aluminum oxide Beta rays Carbon Cathodoluminescence Characterization and Evaluation of Materials Chemistry and Materials Science Continuous radiation Electron traps Fluence Luminescence Materials Science Optical and Electronic Materials Phosphors Photoelectrons Room temperature X ray photoelectron spectroscopy |
title | Carbon doping-induced defect centers in anodized alumina with enhanced optically stimulated luminescence |
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