Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We f...

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Bibliographic Details
Published in:arXiv.org 2021-04
Main Authors: Zimbone, Massimo, Piluso, Nicolo, Litrico, Grazia, Nipoti, Roberta, Reitano, Riccardo, Canino, MariaConcetta, Di Stefano, Maria Ausilia, Lorenti, Simona, Francesco La Via
Format: Article
Language:English
Subjects:
Annealing
Crystal defects
High temperature
Ion implantation
MOSFETs
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Summary:Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750{\deg}C, 1h) followed by a lower temperature one (1500{\deg}C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n- and p- type zones of the device.
ISSN:2331-8422