Nitride Heterostructures and High-Electron-Mobility Transistors on Composite Silicon-Polycrystalline Diamond Substrates

• Published in: Nanotechnologies in Russia 2020-11, Vol.15 (11-12), p.793-796
• Main Authors: Chernykh, M. Y., Ezubchenko, I. S., Mayboroda, I. O., Chernykh, I. A., Kolobkova, E. M., Perminov, P. A., Sedov, V. S., Altakhov, A. S., Andreev, A. A., Grishchenko, J. V., Martyanov, A. K., Konov, V. I., Zanaveskin, M. L.
• Format: Article
• Language: English
• Subjects: Chemistry and Materials Science; Devices and Products Based on Nanomaterials and Nanotechnologies; Epitaxial growth; Gallium nitrides; Heterostructures; High electron mobility transistors; Industrial and Production Engineering; Machines; Manufacturing; Materials Science; Nanotechnology; Polycrystalline diamond; Polycrystals; Processes; Semiconductor devices; Silicon; Silicon substrates; Transistors
• ISSN: 1995-0780; 1995-0799
• DOI: 10.1134/S1995078020060075

A new type of substrates for the growth of nitride heterostructures is presented that consists of a 125-nm thick silicon layer and 290-μm thick polycrystalline diamond. The possibility of epitaxial growth of nitride heterostructures on silicon–polycrystalline diamond substrates with characteristics at the level of heterostructures on silicon substrates is shown. The test transistors demonstrated the following: saturation current density of more than 1 A/mm and breakdown voltage of more than 90 V. The achieved results open up opportunities for the emergence of a new class of silicon-polycrystalline diamond substrates and the creation of powerful gallium nitride transistors with previously unattainable characteristics.