Investigations of some physical properties of ALD growth ZnO films: effect of crystal orientation on photocatalytic activity

• Published in: Journal of materials science. Materials in electronics 2021-05, Vol.32 (9), p.12059-12074
• Main Authors: Polat Gonullu, Meryem, Soyleyici Cergel, Muge, Efkere, Halil Ibrahim, Ates, Hakan
• Format: Article
• Language: English
• Subjects: Annealing; Atomic force microscopy; Atomic layer epitaxy; Catalytic activity; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal dislocations; Crystal structure; Crystallites; Dislocation density; Glass substrates; Investigations; Materials Science; Optical and Electronic Materials; Optoelectronic devices; Orientation effects; Photocatalysis; Physical properties; Zinc oxide
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-021-05835-4

ZnO films have great application potentials from optoelectronic devices to photocatalysis. Detailed film properties and relations between photocatalytic activities of annealed ZnO films grown on glass and corning glass substrates by Atomic Layer Deposition Technique (ALD) were reported in the current study. The structural evolutions were investigated by X-ray diffraction. Results showed that crystal orientations are strongly dependent on substrate materials. The optical band gap values of all films change between 3.26 and 3.24 eV with annealing. Lower electrical resistivity values were obtained for as-grown films. The morphological properties of the films were investigated by atomic force microscopy. In addition, the highest value of photoactivity was determined for ZnO films grown on corning glass substrate and annealed at 600 °C with a value of 53%. Relations between crystal orientations and photocatalytic activities showed that the crystal orientations, crystallite sizes, peak intensities, and dislocation density values are highly effective on photoactivities of ZnO films.